GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

2018 ◽  
Vol 123 (16) ◽  
pp. 161532 ◽  
Author(s):  
Christopher Heidelberger ◽  
Eugene A. Fitzgerald
Keyword(s):  
Dislocation Density ◽  
Current Gain ◽  
Si Substrates ◽  
Dc Current

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers.

1990 ◽  
Vol 198 ◽  
Author(s):  
Hyunchul Sohn ◽  
Eicke R. Weber ◽  
Jay Tu ◽  
Henry P. Lee ◽  
Shy Wang
Keyword(s):  
Residual Stress ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Etch Pits ◽  
Cross Sectional ◽  
Strained Layers ◽  
Si Substrates ◽  
Growth Area ◽  
Threading Dislocation Density ◽  
Influence Of Substrate

ABSTRACTThe growth of GaAs films by MBE on mesa-type patterned Si substrates has been investigated. Mesa widths were varied from 10 µm to 200 µm and were prepared using chemical etching with Si3N4 masks and reactive ion etching. The residual stress in the epitaxial layer was estimated using low temperature (7K) photoluminescence and the defect distribution was studied by cross sectional TEM, dislocation densities were in addition determined by etch pits. The residual stress and the dislocation density decreased monotonically with the reduction of growth area. By the incorporation of strained layers with the reduction of growth area, the etch pit density in GaAs layers on mesas was reduced further.

Surface transport and DC current gain in InGaAs/InP DHBTs for THz applications

2014 ◽  
Author(s):  
Han-Wei Chiang ◽  
Johann C. Rode ◽  
Prateek Choudhary ◽  
Mark J. W. Rodwell
Keyword(s):  
Current Gain ◽  
Surface Transport ◽  
Dc Current ◽  
Thz Applications

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs

1992 ◽  
Vol 262 ◽  
Author(s):  
F. Ren ◽  
T. R. Fullowan ◽  
J. R. Lothian ◽  
P. W. Wisk ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Current Gain ◽  
Rapid Degradation ◽  
Enhanced Diffusion ◽  
Aging Conditions ◽  
The Stability ◽  
Dc Current ◽  
A Current ◽  
Base Doping

ABSTRACTWe contrast the stability under bias-aging conditions of GaAs/AlGaAs HBTs utilizing highly Be- or C-doped base layers. Devices with Be doping display a rapid degradation of dc current gain and junction ideality factor. At 200°C, a 2 × 10 μm2 Be-doped device (4 × 1019cm−3 base doping) operated at a current density of 2.5 × 104 A. cm−2 shows a decrease in gain from 16 to 1.5 within 2h. Under the same conditions a C-doped device with even higher base-doping (7 × 1019 cm−3) is stable over periods of 36h, the longest time we tested our structures. The degradation of Be-doped devices is consistent with the mechanism of recombination-enhanced diffusion of interstitials into the adjoining layers. Similar results are obtained with Zn-doped devices. Since C occupies the As sub-lattice rather than the Ga sublattice as with Be and Zn, it is not susceptible to reaction with Ga interstitials injected during growth or bias-aging.

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

2011 ◽  
Vol 679-680 ◽  
pp. 710-713
Author(s):  
Jian Hui Zhang ◽  
Jian Hui Zhao ◽  
Xiao Hui Wang ◽  
Xue Qing Li ◽  
Leonid Fursin ◽  
...  
Keyword(s):  
High Voltage ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Edge Termination ◽  
Direct Edge ◽  
Dc Current

This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT’s DC current gain () is about 37, and the specific on-resistance (RSP-ON) is ~ 3.0 m-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

Dislocation-density studies in MOCVD GaAs on Si substrates

1988 ◽  
Vol 93 (1-4) ◽  
pp. 475-480 ◽  
Author(s):  
M. Shimizu ◽  
M. Enatsu ◽  
M. Furukawa ◽  
T. Mizuki ◽  
T. Sakurai
Keyword(s):  
Dislocation Density ◽  
Si Substrates ◽  
Gaas On Si
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