Film thickness dependence of dislocation density reduction in GaAs‐on‐Si substrates

ABSTRACTIn this paper we propose a theory which accounts for the thickness dependence of threading dislocation densities in mismatched heteroepitaxial (001) semiconductors. This theory predicts that, for thick, planar, highly-mismatched heteroepitaxial layers with equilibrium strain, the threading dislocation density should be proportional to f/h, where f is thelattice mismatch and h is the film thickness. These predictions are in good agreement with experimental resultsin the GaAs on Si(001) system.

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Dislocation-density studies in MOCVD GaAs on Si substrates

Journal of Crystal Growth ◽

10.1016/0022-0248(88)90569-6 ◽

1988 ◽

Vol 93 (1-4) ◽

pp. 475-480 ◽

Cited By ~ 16

Author(s):

M. Shimizu ◽

M. Enatsu ◽

M. Furukawa ◽

T. Mizuki ◽

T. Sakurai

Keyword(s):

Dislocation Density ◽

Si Substrates ◽

Gaas On Si

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Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

Applied Physics Letters ◽

10.1063/1.102636 ◽

1990 ◽

Vol 56 (1) ◽

pp. 27-29 ◽

Cited By ~ 61

Author(s):

Masafumi Yamaguchi ◽

Masami Tachikawa ◽

Mitsuru Sugo ◽

Susumu Kondo ◽

Yoshio Itoh

Keyword(s):

Dislocation Density ◽

Si Substrates ◽

Density Reduction ◽

Selective Area ◽

Gaas Films

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Film Thickness Dependence of Electrical Properties for Pb(Zr,Ti)O 3 Thin Films Prepared on (111)Ir/TiO 2 /SiO 2 /Si and (111)Pt/TiO 2 /SiO 2 /Si Substrates by Pulsed-Metalorganic Chemical Vapor Deposition

Integrated Ferroelectrics ◽

10.1080/10584580390259867 ◽

2003 ◽

Vol 59 (1) ◽

pp. 1421-1428

Author(s):

T. Oikawa ◽

H. Funakubo ◽

H. Morioka ◽

K. Saito

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Film Thickness ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Thickness Dependence ◽

Si Substrates ◽

Metalorganic Chemical

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Film Thickness Dependence of Electrical Properties for Pb(Zr,Ti)O3 Thin Films Prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si Substrates by Pulsed-Metalorganic Chemical Vapor Deposition

Integrated Ferroelectrics ◽

10.1080/714040803 ◽

2003 ◽

Vol 59 (1) ◽

pp. 1421-1428 ◽

Cited By ~ 1

Author(s):

T. Oikawa ◽

H. Funakubo ◽

H. Morioka ◽

K. Saito

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Film Thickness ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Thickness Dependence ◽

Si Substrates ◽

Metalorganic Chemical

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Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led

MRS Proceedings ◽

10.1557/proc-145-279 ◽

1989 ◽

Vol 145 ◽

Cited By ~ 6

Author(s):

Masafumi Yamaguchi ◽

Susumu Kondo

Keyword(s):

Solar Cells ◽

Dislocation Density ◽

High Efficiency ◽

Chemical Vapor ◽

Organic Chemical ◽

Heteroepitaxial Growth ◽

Misfit Stress ◽

Si Substrates ◽

Density Reduction ◽

Dislocation Annihilation

AbstractHeteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining strained- layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AMO) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes (LEDs) have been realized.

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Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

Journal of Materials Research ◽

10.1557/jmr.1991.0376 ◽

1991 ◽

Vol 6 (2) ◽

pp. 376-384 ◽

Cited By ~ 82

Author(s):

Masafumi Yamaguchi

Keyword(s):

Dislocation Density ◽

High Efficiency ◽

Chemical Vapor ◽

Organic Chemical ◽

Misfit Stress ◽

Si Substrates ◽

Density Reduction ◽

Strained Layer Superlattice ◽

Dislocation Movement ◽

Dislocation Annihilation

The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been obtained by combining strained-layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AM0) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes have been realized. Moreover, future prospects of heteroepitaxy of III-V compounds on Si are also discussed.

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