Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer
2018 ◽
Vol 123
(1)
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pp. 015302
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Kwang Hong Lee
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Shuyu Bao
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Yue Wang
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Eugene A. Fitzgerald
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Chuan Seng Tan
1996 ◽
Vol 118
(1-4)
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pp. 556-559
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Robert A. Weller
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Kyle McDonald
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Diane Pedersen
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Joseph A. Keenan
T. ITO
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S. HIJIYA
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T. NOZAKI
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H. ARAKAWA
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M. SHINODA
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...
2017 ◽
Vol 124
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pp. 288-294
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Barbora Mojrová
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Haifeng Chu
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Christop Peter
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Pirmin Preis
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Jan Lossen
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...
1993 ◽
Vol 64-65
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pp. 849-856
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S. Vallon
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B. Drévillon
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C. Sénémaud
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A. Gheorghiu
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V. Yakovlev
2006 ◽
Vol 85
(2)
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pp. 145-150
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P. Patzner
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A.V. Osipov
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P. Hess
2004 ◽
Vol 84
(17)
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pp. 3295-3297
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M. Derivaz
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P. Noé
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R. Dianoux
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A. Barski
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A. Coati
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...
1977 ◽
Vol 26
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pp. 129-131
N. N. Gerasimenko
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T. I. Kovalevskaya
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V. G. Pan'kin
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K. K. Svitashev
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G. M. Tseitlin
2001 ◽
Vol 13
(2)
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pp. 655-661
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Mihai Scarlete
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Nancy McCourt
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Ian S. Butler
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John F. Harrod
2000 ◽
Vol 115
(12)
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pp. 683-686
◽
X.C Wu
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W.H Song
◽
B Zhao
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W.D Huang
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M.H Pu
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...
2015 ◽
Vol 9
(11)
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pp. 617-621
◽
Di Yan
◽
Andres Cuevas
◽
Yimao Wan
◽
James Bullock