Aspect and mass ratio dependence of microwave heating in silicon carbide fibers at 2.45 GHz

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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Electrolytic Treatment of Continuous CVD Silicon Carbide Fibers

Journal of the American Ceramic Society ◽

10.1111/j.1151-2916.1997.tb03191.x ◽

2005 ◽

Vol 80 (10) ◽

pp. 2754-2756 ◽

Cited By ~ 2

Author(s):

Xinchun Chang ◽

Yijun Du

Keyword(s):

Silicon Carbide ◽

Silicon Carbide Fibers ◽

Electrolytic Treatment

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Electromagnetic wave absorption and mechanical properties of silicon carbide fibers reinforced silicon nitride matrix composites

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2018.12.038 ◽

2019 ◽

Vol 39 (4) ◽

pp. 743-754 ◽

Cited By ~ 15

Author(s):

Ran Mo ◽

Xiaowei Yin ◽

Fang Ye ◽

Xiaofei Liu ◽

Xiaokang Ma ◽

...

Keyword(s):

Mechanical Properties ◽

Silicon Carbide ◽

Electromagnetic Wave ◽

Silicon Nitride ◽

Matrix Composites ◽

Electromagnetic Wave Absorption ◽

Wave Absorption ◽

Silicon Carbide Fibers

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Microwave Synthesis of Silicon Carbide Nano Powders with Silicon and Carbon

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.118 ◽

2014 ◽

Vol 602-603 ◽

pp. 118-121

Author(s):

You Jun Lu ◽

Hong Fang Shen ◽

Sheng Wei Guo

Keyword(s):

Silicon Carbide ◽

Particle Size ◽

Microwave Heating ◽

Chemical Reaction ◽

Crystalline Phase ◽

Microwave Synthesis ◽

Time Effects ◽

Xrd Patterns

Nanosized silicon carbide powders were synthesized from a mixture of silicon and carbon by microwave heating methods. The Result Indicates SiC can be formed at lower temperatures by using the Si-C reaction at 1200°C for 30min. XRD patterns shows that SiC peaks appeared as the only crystalline phase. SEM photo shows the particle size was 100～200 nanometer. At the same time, Effects of chemical reaction of silicon and carbon was researched by mechanical activated microwave synthesis.

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