scholarly journals Photovoltaic effect in multi-domain ferroelectric perovskite oxides

2019 ◽  
Vol 125 (6) ◽  
pp. 064103 ◽  
Author(s):  
Ying Shi Teh ◽  
Kaushik Bhattacharya
2017 ◽  
Vol 110 (14) ◽  
pp. 142901 ◽  
Author(s):  
Jian-kun Li ◽  
Chen Ge ◽  
Kui-juan Jin ◽  
Jian-yu Du ◽  
Jing-ting Yang ◽  
...  

2004 ◽  
Vol 43 (9B) ◽  
pp. 6785-6792 ◽  
Author(s):  
Takatoshi Hashimoto ◽  
Takeshi Nishimatsu ◽  
Hiroshi Mizuseki ◽  
Yoshiyuki Kawazoe ◽  
Atsushi Sasaki ◽  
...  

2021 ◽  
Author(s):  
Yue Li ◽  
Jun Fu ◽  
Xiaoyu Mao ◽  
Chen Chen ◽  
Heng Liu ◽  
...  

Abstract The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottey barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progresses have shown a promising route to surpass this limit via the bulk photovoltaic effect (BPVE) for crystals without inversion symmetry. Here we report the BPVE in two-dimensional (2D) ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The BPVE is inherently associated to the room-temperature polar ordering in 2D CuInP2S6. We also demonstrate a crossover from 2D to 3D BPVE material with the observation of a dramatic decrease in photocurrent density when the thickness of the 2D material exceeds the free path length (\({l}_{0}\)) at around 40 nm. This work spotlights the potential application of ultrathin 2D ferroelectric materials for the third-generation photovoltaic cells.


1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3488-3491 ◽  
Author(s):  
Kaoru Miura ◽  
Masahiro Tanaka

1996 ◽  
Vol 35 (Part 1, No. 5A) ◽  
pp. 2719-2725 ◽  
Author(s):  
Kaoru Miura ◽  
Masahiro Tanaka

2005 ◽  
Vol 87 (1) ◽  
pp. 012103 ◽  
Author(s):  
J. C. Jan ◽  
H. M. Tsai ◽  
C. W. Pao ◽  
J. W. Chiou ◽  
K. Asokan ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yue Li ◽  
Jun Fu ◽  
Xiaoyu Mao ◽  
Chen Chen ◽  
Heng Liu ◽  
...  

AbstractThe photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottky barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progress has shown a promising route to surpass this limit via the bulk photovoltaic effect for crystals without inversion symmetry. Here we report the bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The bulk photovoltaic effect is inherently associated to the room-temperature polar ordering in two-dimensional CuInP2S6. We also demonstrate a crossover from two-dimensional to three-dimensional bulk photovoltaic effect with the observation of a dramatic decrease in photocurrent density when the thickness of the two-dimensional material exceeds the free path length at around 40 nm. This work spotlights the potential application of ultrathin two-dimensional ferroelectric materials for the third-generation photovoltaic cells.


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