scholarly journals Low frequency noise and trap density in GaN/AlGaN field effect transistors

2019 ◽  
Vol 115 (18) ◽  
pp. 183501 ◽  
Author(s):  
P. Sai ◽  
J. Jorudas ◽  
M. Dub ◽  
M. Sakowicz ◽  
V. Jakštas ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise

LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC

2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Enhancement Mode ◽  
High K ◽  
High K Dielectric

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

2008 ◽  
Vol 92 (22) ◽  
pp. 223114 ◽  
Author(s):  
Guangyu Xu ◽  
Fei Liu ◽  
Song Han ◽  
Koungmin Ryu ◽  
Alexander Badmaev ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise

Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors

2019 ◽  
Vol 114 (11) ◽  
pp. 113502 ◽  
Author(s):  
Jiseok Kwon ◽  
Joon Hyeong Park ◽  
Collin J. Delker ◽  
Charles T. Harris ◽  
Brian Swartzentruber ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNxGate Insulator

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FE18 ◽  
Author(s):  
Toru Muramatsu ◽  
Kensuke Miura ◽  
Yuta Shiratori ◽  
Zenji Yatabe ◽  
Seiya Kasai
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gaas Nanowire

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

2000 ◽  
Vol 76 (23) ◽  
pp. 3442-3444 ◽  
Author(s):  
J. A. Garrido ◽  
B. E. Foutz ◽  
J. A. Smart ◽  
J. R. Shealy ◽  
M. J. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Mobility Fluctuations

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

2015 ◽  
Vol 8 (4) ◽  
pp. 044201 ◽  
Author(s):  
Takashi Matsukawa ◽  
Koichi Fukuda ◽  
Yongxun Liu ◽  
Junichi Tsukada ◽  
Hiromi Yamauchi ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gate Electrode
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