scholarly journals Stability of the surface passivation properties of atomic layer deposited aluminum oxide in damp heat conditions

2019 ◽  
Author(s):  
Ismo T. S. Heikkinen ◽  
George Koutsourakis ◽  
Sebastian Wood ◽  
Ville Vähänissi ◽  
Fernando A. Castro ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Surface Passivation ◽  
Atomic Layer

scholarly journals Enhanced efficiency of Cu2ZnSn(S,Se)4 solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide

RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 19213-19219 ◽  
Author(s):  
Bingye Zhang ◽  
Lu Han ◽  
Shitian Ying ◽  
Yongfeng Li ◽  
Bin Yao
Keyword(s):  
Solar Cells ◽  
Aluminum Oxide ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Passivation Layer

ALD-Al2O3 is used as a passivation layer in a CZTSSe device and optimal device parameters are obtained by precisely controlling Al2O3 thickness.

Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide

2017 ◽  
Vol 26 (9) ◽  
pp. 098103 ◽  
Author(s):  
Cai-Xia Hou ◽  
Xin-He Zheng ◽  
Rui Jia ◽  
Ke Tao ◽  
San-Jie Liu ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Atomic Layer ◽  
Silicon Surface Passivation

Excellentc-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

2013 ◽  
Vol 46 (38) ◽  
pp. 385102 ◽  
Author(s):  
B Liao ◽  
R Stangl ◽  
F Ma ◽  
T Mueller ◽  
F Lin ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Surface Passivation ◽  
Atomic Layer

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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