High-resolution electron microscopy of the atomic structure of some grain boundaries in Au

1986 ◽  
Vol 44 ◽  
pp. 414-415
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Image Features ◽  
Image Feature ◽  
Resolution Electron ◽  
Tilt Boundaries ◽  
Processing Techniques ◽  
Atom Position ◽  
Structure Configuration

The successful determination of the atomic structure of [110] tilt boundaries in Au stems from the investigation of microscope performance at intermediate accelerating voltages (200 and 400kV) as well as a detailed understanding of how grain boundary image features depend on dynamical diffraction processes variation with specimen and beam orientations. This success is also facilitated by improving image quality by digital image processing techniques to the point where a structure image is obtained and each atom position is represented by a resolved image feature. Figure 1 shows an example of a low angle (∼10°) Σ = 129/[110] tilt boundary in a ∼250Å Au film, taken under tilted beam brightfield imaging conditions, to illustrate the steps necessary to obtain the atomic structure configuration from the image. The original image of Fig. 1a shows the regular arrangement of strain-field images associated with the cores of ½ [10] primary dislocations which are separated by ∼15Å.

High Resolution Electron Microscopy and Computer Simulation Studies of the Atomic Structure of Tilt Boundaries in TiO2

1994 ◽  
Vol 357 ◽  
Author(s):  
Yaping Liu ◽  
Imtiaz Majid ◽  
John B. Vander Sande
Keyword(s):  
Electron Microscopy ◽  
Computer Simulation ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Symmetric Plane ◽  
Tilt Boundaries ◽  
Computer Simulation Studies ◽  
Simulated Images

AbstractThe atomic structure of [001] tilt grain boundaries of Σ25 (210), Σ5 (310), Σ213 (320) and Σ217 (410) in TiO2 (rutile) were studied using high resolution electron microscopy and computer simulation. Regularly separated small steps (1/2 [120] high) and big steps (3/2 [120] high) which contain secondary dislocations were found in the (210) boundary as a result of deviation from the exact Σ5 misorientation and (210) symmetric plane. Similar steps were also found in (310) and (320) boundaries. Flat segments between the steps were found to have very accurate misorientation of their, Σ's and a nearly symmetric boundary plane. Their rigid body translation, volume expansion and relaxed structures were determined by comparing HRTEM images with computer calculated structures and simulated images. An irregular core structure was found in the (410) boundary when its misorientation deviated 2° from the exact Σ17 misorientation.

Structure Determination of Tilt Boundaries in Gold by High Resolution Electron Microscopy

1986 ◽  
Vol 82 ◽  
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
High Resolution ◽  
Structure Determination ◽  
Rotation Axis ◽  
Three Dimensional ◽  
High Resolution Electron Microscopy ◽  
Transmission Microscopy ◽  
Resolution Electron ◽  
Tilt Boundaries ◽  
Growth Twin

ABSTRACTA number of tilt grain boundaries prepared from evaporated gold thin films have been investigated by high resolution transmission microscopy. When the grain boundary is parallel to the electron beam and the beam is parallel to a low index rotation axis such as [110] or [001]it is possible to identify atomic positions at the cores of these boundaries as demonstrated here by a Σ = 3 70.5°/[110], (112) growth twin. In many cases it is not possible to make a full atomistic structure determination because the specimen does not have translational periodicity in the beam direction. This may be because the boundary plane is not parallel to the beam or the specimen contains dislocations which have a component of Burgers vector parallel to the beam. Examples are given of various low angle boundary structures in goldwhere there are complications because of the three dimensional nature of their structure.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

1994 ◽  
Vol 52 ◽  
pp. 728-729
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  
Keyword(s):  
High Pressure ◽  
High Resolution ◽  
Atomic Structure ◽  
Emission Spectra ◽  
High Resolution Electron Microscopy ◽  
Planar Defects ◽  
X Ray ◽  
Infinite Layer ◽  
Resolution Electron ◽  
Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

Combined Experimentaland Theoretical Determination of the Atomic Structure of the (310) Twin in NB

1991 ◽  
Vol 238 ◽  
Author(s):  
Geoffrey H. Campbells ◽  
Wayne E. King ◽  
Stephen M. Foiles ◽  
Peter Gumbsch ◽  
Manfred Rühle
Keyword(s):  
High Resolution ◽  
Theoretical Models ◽  
High Resolution Electron Microscopy ◽  
Interatomic Potentials ◽  
Image Simulation ◽  
Theoretical Determination ◽  
Atomic Structures ◽  
Resolution Electron ◽  
High Resolution Images

ABSTRACTA (310) twin boundary in Nb has been fabricated by diffusion bonding oriented single crystals and characterized using high resolution electron microscopy. Atomic structures for the boundary have been predicted using different interatomic potentials. Comparison of the theoretical models to the high resolution images has been performed through image simulation. On the basis of this comparison, one of the low energy structures predicted by theory can be ruled out.

Characterization of Tilt Boundaries by Ultra High Resolution Electron Microscopy

1984 ◽  
Vol 41 ◽  
Author(s):  
W. Krakow ◽  
J. T. Wetzel ◽  
D. A. Smith ◽  
G. Trafas
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Structural Information ◽  
Theoretical Work ◽  
High Resolution Electron Microscopy ◽  
Point Of View ◽  
Experimental Point ◽  
Structure Information ◽  
Resolution Electron ◽  
Tilt Boundaries

AbstractA high resolution electron microscope study of grain boundary structures in Au thin films has been undertaken from both a theoretical and experimental point of view. The criteria necessary to interpret images of tilt boundaries at the atomic level, which include electron optical and specimen effects, have been considered for both 200kV and the newer 400kV medium voltage microscopes. So far, the theoretical work has concentrated on two different [001] tilt bounda-ries where a resolution of 2.03Å is required to visualize bulk lattice structures on either side of the interface. Both a high angle boundary, (210) σ=5, and a low angle boundary, (910) σ=41, have been considered. Computational results using multislice dynamical diffraction and image simulations of relaxed bounda-ries viewed edge-on and with small amounts of beam and/or specimen inclina-tion have been obtained. It will be shown that some structural information concerning grain boundary dislocations can be observed at 200kV. However, many difficulties occur in the exact identification of the interface structure viewed experimentally for both [001] and [011] boundaries since the resolution required is near the performance limit of a 200kV microscope. The simulated results at 400kV indicate a considerable improvement will be realized in obtain-ing atomic structure information at the interface.

Structure, Composition and Stability of Heterophase Boundaries

1997 ◽  
Vol 3 (S2) ◽  
pp. 673-674
Author(s):  
M. Rühle ◽  
T. Wagner ◽  
S. Bernath ◽  
J. Plitzko ◽  
C. Scheu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Elevated Temperatures ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Advanced Materials ◽  
Bulk Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Stability

Heterophase boundaries play an important role in advanced materials since those materials often comprise different components. The properties of the materials depend strongly on the properties of the interface between the components. Thus, it is important to investigate the stability of the microstructure with respect to annealing at elevated temperatures. In this paper results will be presented on the structure and composition of the interfaces between Cu and (α -Al2O3. The interfaces were processed either by growing a thin Cu overlayer on α- Al2O3 in a molecular beam epitaxy (MBE) system or by diffusion bonding bulk crystals of the two constituents in an UHV chamber. To improve the adhesion of Cu to α -Al2O3 ultrathin Ti interlayers were deposited between Cu and α - Al2O3.Interfaces were characterized by different transmission electron microscopy (TEM) techniques. Quantitative high-resolution electron microscopy (QHRTEM) allows the determination of the structure (coordinates of atoms) while analytical electron microscopy (AEM) allows the determination of the composition with high spatial resolution.

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