Unlocking the materials to new electronic behavior

Scilight ◽  
2021 ◽  
Vol 2021 (19) ◽  
pp. 191105
Author(s):  
Alane Lim
Keyword(s):  
1980 ◽  
Vol 35 (12) ◽  
pp. 1021-1024 ◽  
Author(s):  
J.M. Friedt ◽  
J. MacCordick ◽  
J.P. Sanchez ◽  
J. Rebizant
Keyword(s):  

1982 ◽  
Vol 14 ◽  
Author(s):  
Hans J. Queisser

ABSTRACTSimple models have been suggested to predict electronic properties of lattice defects in semiconductor crystals: dislocations ought to act via the acceptor character of dangling bonds, and small-angle grain boundaries ought to consist of regular arrays of dislocations. The actual situation in most semiconductors is, however, much more complicated. The observed electrical effects of dislocations do not confirm the dangling-bond concept, they are affected by dissociation and reconstruction. There appear to be differences between straight and kinked dislocations. Dislocations owe much of their electronic behavior to clouds and precipitates of impurities; oxygen in silicon plays a significant role. This review summarizes the present status of experimental methods and results, including luminescence and capacitance spectroscopy as well as mapping and imaging techniques using electron-microscopes.


2006 ◽  
Vol 43 (1) ◽  
pp. 95-100
Author(s):  
Hideo Matsui ◽  
Keigo Otsuki ◽  
Hiroyoshi Yamada ◽  
Masakuni Yoshihara

2011 ◽  
Vol 1331 ◽  
Author(s):  
Robert E. Usiskin ◽  
Richard Y. Wang ◽  
Sossina M. Haile

ABSTRACTThe perovskite Ba0.5Sr0.5Co0.8Fe0.2O3-d (BSCF 5582) has attracted great interest as an oxygen reduction catalyst for solid oxide fuel cells and as an oxygen permeation membrane material. Mixed ionic and electronic conductivity is essential to the high catalytic activity it exhibits, however its electronic behavior and overall defect chemistry are not well understood. The related material SrCo0.9Nb0.1O3-d (SCN 091) is another promising composition that may have comparable performance, but with defect chemistry that is simpler to study. From a combination of thermogravimetric, impedance, and diffraction measurements we find SCN 091 to exhibit somewhat smaller oxygen nonstoichiometry, five times higher electronic conductivity, lower enthalpy of hole migration, and greater structural stability than BSCF 5582. We also observe that the enthalpy of hole migration in such materials tends to increase as oxygen content decreases; the origins of this behavior are unclear.


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