Ferroelectric domain structure of Bi2FeCrO6 multiferroic thin films

2020 ◽  
Vol 128 (23) ◽  
pp. 234103
Author(s):  
Yuan Liu ◽  
Jianjun Lin ◽  
Ni Zhong ◽  
Ping-Hua Xiang ◽  
Ye Chen ◽  
...  
2014 ◽  
Vol 8 (6) ◽  
pp. 522-526 ◽  
Author(s):  
Martin Schmidbauer ◽  
Jan Sellmann ◽  
Dorothee Braun ◽  
Albert Kwasniewski ◽  
Andreas Duk ◽  
...  

2002 ◽  
Vol 88 (10) ◽  
Author(s):  
M. A. Zurbuchen ◽  
G. Asayama ◽  
D. G. Schlom ◽  
S. K. Streiffer

2014 ◽  
Vol 115 (20) ◽  
pp. 204105 ◽  
Author(s):  
J. Schwarzkopf ◽  
D. Braun ◽  
M. Schmidbauer ◽  
A. Duk ◽  
R. Wördenweber

2013 ◽  
Vol 544 ◽  
pp. 219-225 ◽  
Author(s):  
Yao Ting Huang ◽  
Xiu Li Fu ◽  
Xiao Hong Zhao ◽  
Wei Hua Tang

BiFeO3 is a very promising multiferroic materials, which can present ferroelectric and antiferromagnetic properties at room temperature (Tn=643 K, Tc= 1103 K). Ferroelectric domains in BiFeO3 thin films have attracted much attention due to their potential applications in memory devices. The aim of this paper is to review the main factors which can influence the ferroelectric domain structure in BiFeO3 thin films, including substrate, doping and film thickness.


1990 ◽  
Vol 200 ◽  
Author(s):  
J.P. Goral ◽  
Maria Huffman ◽  
M.M. Al-Jassim

ABSTRACTThe ferroelectric domain structure in sputtered lead zirconate titanate (PZT) thin films has been investigated using transmission electron microscopy (TEM) and transmission electron diffraction (TED). The individual ferroelectric domains occur as {110}-type microtwins as is observed in the bulk ceramic. The arrangement and size of the ferroelectric domains is strongly dependent on the microstructure of the sputtered film.


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