Resistive Switching Memory Based on Three-Dimensionally Confined Ag Quantum Dots Embedded in Ultra Thin Polyimide Layers

Resistive switching memory device with metal-oxide quantum dots on a graphene layer

physica status solidi (a) ◽

10.1002/pssa.201532408 ◽

2015 ◽

Vol 213 (2) ◽

pp. 325-328

Author(s):

Dong Uk Lee ◽

Dongri Qiu ◽

Eun Kyu Kim

Keyword(s):

Quantum Dots ◽

Metal Oxide ◽

Resistive Switching ◽

Graphene Layer ◽

Memory Device ◽

Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots

Applied Physics Letters ◽

10.1063/1.5087594 ◽

2019 ◽

Vol 114 (18) ◽

pp. 181103 ◽

Cited By ~ 13

Author(s):

Zhiliang Chen ◽

Yating Zhang ◽

Yu Yu ◽

Mingxuan Cao ◽

Yongli Che ◽

...

Keyword(s):

Quantum Dots ◽

Resistive Switching ◽

Memory Devices ◽

Inorganic Perovskite ◽

Perovskite Quantum Dots ◽

Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c00006 ◽

2020 ◽

Vol 2 (3) ◽

pp. 827-837 ◽

Cited By ~ 2

Author(s):

Jianwei Guo ◽

Shen Guo ◽

Xiaoming Su ◽

Sheng Zhu ◽

Yue Pang ◽

...

Keyword(s):

Quantum Dots ◽

Resistive Switching ◽

Memory Device ◽

Core Shell ◽

Electrode Modification ◽

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

Applied Physics Letters ◽

10.1063/5.0039654 ◽

2021 ◽

Vol 118 (17) ◽

pp. 172104

Author(s):

Xinna Yu ◽

Ke Chang ◽

Anhua Dong ◽

Zhikai Gan ◽

Kang'an Jiang ◽

...

Keyword(s):

Quantum Dots ◽

Molybdenum Disulfide ◽

Resistive Switching ◽

High Performance ◽

Resistive switching memory devices based on PbS quantum dots

Optoelectronic Devices and Integration VIII ◽

10.1117/12.2538555 ◽

2019 ◽

Author(s):

Zhiliang Chen ◽

Yating Zhang ◽

Yu Yu ◽

Lufan Jin ◽

Yifan Li ◽

...

Keyword(s):

Quantum Dots ◽

Resistive Switching ◽

Memory Devices ◽

Pbs Quantum Dots ◽

Facile Synthesis of Co9Se8 Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b09616 ◽

2016 ◽

Vol 8 (44) ◽

pp. 30336-30343 ◽

Cited By ~ 22

Author(s):

Peng Zhang ◽

Benhua Xu ◽

Cunxu Gao ◽

Guilin Chen ◽

Meizhen Gao

Keyword(s):

Quantum Dots ◽

Resistive Switching ◽

Memory Device ◽

Facile Synthesis ◽

A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

Organic Electronics ◽

10.1016/j.orgel.2020.105932 ◽

2020 ◽

Vol 87 ◽

pp. 105932 ◽

Cited By ~ 1

Author(s):

Jitendra Singh ◽

R.G. Singh ◽

Subodh K. Gautam ◽

Himanshi Gupta ◽

Fouran Singh

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Ion Irradiation ◽

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170015 ◽

2021 ◽

Vol 7 (5) ◽

pp. 2170015

Author(s):

Yu‐Chuan Shih ◽

Ling Lee ◽

Kai‐De Liang ◽

Arumugam Manikandan ◽

Wen‐Wu Liu ◽

...

Keyword(s):

Resistive Switching ◽

Single Crystalline ◽

Polymer Nanocomposites for Resistive Switching Memory

Polymer Nanocomposite Materials ◽

10.1002/9783527826490.ch8 ◽

2021 ◽

pp. 211-246

Author(s):

Qazi Muhammad Saqib ◽

Muhammad Umair Khan ◽

Jinho Bae

Keyword(s):

Polymer Nanocomposites ◽

Resistive Switching ◽

Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3029552 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5484-5489

Author(s):

Yooyeon Jo ◽

Christos Dimitrakopoulos

Keyword(s):

Resistive Switching ◽

Black Phosphorus ◽

Memory Devices ◽

Graphene Layers ◽