scholarly journals One-dimensional semiconductor nanostructures grown on two-dimensional nanomaterials for flexible device applications

APL Materials ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 060907
Author(s):  
Young Joon Hong ◽  
Rajendra K. Saroj ◽  
Won Il Park ◽  
Gyu-Chul Yi
Keyword(s):  
Semiconductor Nanostructures ◽  
Two Dimensional ◽  
One Dimensional ◽  
Flexible Device ◽  
Device Applications

Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures

2018 ◽  
Vol 47 (20) ◽  
pp. 7504-7521 ◽  
Author(s):  
Honglai Li ◽  
Xiao Wang ◽  
Xiaoli Zhu ◽  
Xiangfeng Duan ◽  
Anlian Pan
Keyword(s):  
Semiconductor Nanostructures ◽  
Two Dimensional ◽  
Chalcogenide Semiconductor ◽  
One Dimensional ◽  
Composition Modulation

This article reviews our successful realization of the composition modulated single chalcogenide semiconductor nanostructures.

Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 22118-22124
Author(s):  
Hyebin Lee ◽  
Kookjin Lee ◽  
Yanghee Kim ◽  
Hyunjin Ji ◽  
Junhee Choi ◽  
...  
Keyword(s):  
Transition Metal ◽  
Layered Structures ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Flexible Device ◽  
Device Applications ◽  
Stable Surfaces

Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications.

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC

2005 ◽  
Vol 483-485 ◽  
pp. 163-168 ◽  
Author(s):  
Andreas Fissel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Semiconductor Nanostructures ◽  
Two Dimensional ◽  
Nanorod Arrays ◽  
Mbe Growth ◽  
One Dimensional

The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.

scholarly journals Carbon Nanotube-Graphene hybrid: Recent Synthesis Methodologies and Applications

2017 ◽  
Vol 4 (1) ◽  
pp. 72-91
Author(s):  
Geoffrey Ijeomah ◽  
Fahmi Samsuri ◽  
Mohamad Adzhar Md Zawawi ◽  
Felix Obite
Keyword(s):  
Carbon Nanotubes ◽  
Optical Properties ◽  
Two Dimensional ◽  
Scientific Interest ◽  
One Dimensional ◽  
3 Dimensional ◽  
Device Applications ◽  
Fundamental Research ◽  
Recent Synthesis ◽  
Made In

The melding of one-dimensional (1D) carbon nanotubes (CNTs) and two-dimensional (2D) graphene to generate a CNT-graphene hybrid with 3-dimensional (3D) features has generated a lot of scientific interest owing to the synergistic consequences of the resulting interface hybrid on the electrical, mechanical, electrochemical and optical properties, which presents plethora of opportunities in both fundamental research and device applications. The review presents an overview of the recent perspectives made in the field of CNT-graphene hybrid architectures. The possible applications particularly in device sensing, as well as challenges are also presented.

scholarly journals Novel Properties of Semiconductor Nanowires

2021 ◽  
pp. 345-354
Author(s):  
Kruti Wohra ◽  
Arun Kumar Diwakar ◽  
Anant G. Kulkarni
Keyword(s):  
Optical Properties ◽  
Quantum Confinement ◽  
Review Paper ◽  
Semiconductor Nanowires ◽  
Phonon Transport ◽  
Semiconductor Nanostructures ◽  
Wide Scope ◽  
Nanoscale Device ◽  
One Dimensional ◽  
Device Applications

Semiconductor nanowires guarantee to give the structure squares to another age of nanoscale electronic and optoelectronic gadgets and display novel electronic and optical properties inferable from their special underlying one-dimensionality and conceivable quantum confinement impacts in two measurements. With an expansive choice of creations and band structures, these one-dimensional semiconductor nanostructures are viewed as the basic segments in a wide scope of potential nanoscale device applications. This review paper explains the basic properties showed by semiconductor nanowires. Novel properties including nanowire miniature hole lasing, phonon transport, interfacial security, and synthetic detecting are reviewed.

A one-dimensional self-gravitating stellar gas

1966 ◽  
Vol 25 ◽  
pp. 46-48 ◽  
Author(s):  
M. Lecar
Keyword(s):  
Gravitational Field ◽  
Phase Space ◽  
Motion Picture ◽  
Space Distribution ◽  
Two Dimensional ◽  
One Dimensional ◽  
Phase Space Distribution ◽  
Dimensional Phase Space ◽  
The Mean

“Dynamical mixing”, i.e. relaxation of a stellar phase space distribution through interaction with the mean gravitational field, is numerically investigated for a one-dimensional self-gravitating stellar gas. Qualitative results are presented in the form of a motion picture of the flow of phase points (representing homogeneous slabs of stars) in two-dimensional phase space.

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