scholarly journals Novel Properties of Semiconductor Nanowires

Author(s):  
Kruti Wohra ◽  
Arun Kumar Diwakar ◽  
Anant G. Kulkarni

Semiconductor nanowires guarantee to give the structure squares to another age of nanoscale electronic and optoelectronic gadgets and display novel electronic and optical properties inferable from their special underlying one-dimensionality and conceivable quantum confinement impacts in two measurements. With an expansive choice of creations and band structures, these one-dimensional semiconductor nanostructures are viewed as the basic segments in a wide scope of potential nanoscale device applications. This review paper explains the basic properties showed by semiconductor nanowires. Novel properties including nanowire miniature hole lasing, phonon transport, interfacial security, and synthetic detecting are reviewed.

2013 ◽  
Vol 850-851 ◽  
pp. 3-6
Author(s):  
Chao Wang ◽  
Rong Sheng Cai ◽  
Fei Yu Diao ◽  
Lu Yuan ◽  
Guang Wen Zhou ◽  
...  

One-dimensional nanostructures exhibit interesting electronic and optical properties due to their low dimensionality leading to quantum confinement effects. ZnO has received lot of attention as a nanostructured material because of unique properties rendering it suitable for various applications. In this paper, ZnO nanowires are synthesized in large quantity through thermal oxidation of brass (Cu0.7Zn0.3alloy). The epitaxial relationship between the brass substrates and ZnO layer and the epitaxial relationship between the ZnO nanowire and ZnO layer have been examined.


APL Materials ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 060907
Author(s):  
Young Joon Hong ◽  
Rajendra K. Saroj ◽  
Won Il Park ◽  
Gyu-Chul Yi

1995 ◽  
Vol 405 ◽  
Author(s):  
Y. S. Tang ◽  
C. M. Sotomayor Torres

AbstractSemiconductor quantum wires and dots have been fabricated in GaAs/AlGaAs, CdTe/CdMnTe and Si/SiGe multiple quantum wells using electron beam patterning and reactive ion etching and studied by photoreflectance, photoluminescence and Raman scattering. It was found that the smaller the lateral size of the nanostructure, the smaller the fabrication induced residual strain. In all cases, the dominant strain component is found to be parallel to the sample growth direction, i.e., along the etched sidewalls of the etched wires and dots. The lateral confining potential is found to be quasi-parabolic for polar semiconductor systems. Possible ways of using and controlling the damage and residual strain in nanostructures are discussed in the context of device applications of nanostructures.


Author(s):  
Geoffrey Ijeomah ◽  
Fahmi Samsuri ◽  
Mohamad Adzhar Md Zawawi ◽  
Felix Obite

The melding of one-dimensional (1D) carbon nanotubes (CNTs) and two-dimensional (2D) graphene to generate a CNT-graphene hybrid with 3-dimensional (3D) features has generated a lot of scientific interest owing to the synergistic consequences of the resulting interface hybrid on the electrical, mechanical, electrochemical and optical properties, which presents plethora of opportunities in both fundamental research and device applications. The review presents an overview of the recent perspectives made in the field of CNT-graphene hybrid architectures. The possible applications particularly in device sensing, as well as challenges are also presented.


2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  

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