Identification of free and bound exciton emission of MgO single crystal in vacuum ultraviolet spectral range

2021 ◽  
Vol 119 (13) ◽  
pp. 132105
Author(s):  
Takeyoshi Onuma ◽  
Wataru Kosaka ◽  
Kanta Kudo ◽  
Yuichi Ota ◽  
Tomohiro Yamaguchi ◽  
...  
1972 ◽  
Vol 25 (7) ◽  
pp. 1427 ◽  
Author(s):  
LE Lyons ◽  
LJ Warren

By the addition of dopants to single crystal anthraoene it is shown that many of the fluorescence bands additional to exciton emission are due to traces of 2-methylanthracene. Other impurity bands, apparently arising from locally disorientated host molecules, appear on doping with most of the following, the effects increasing in the order given: carbazole, biphenyl, p-terphenyl, anthraquinone, naphthalene, naphthacene, phenanthrene, pyrene, chrysene. The host vibronic bands were virtually unaffected by dopants, except for small line shifts in the presence of 2-methylanthracene.


Metrologia ◽  
1995 ◽  
Vol 32 (6) ◽  
pp. 571-574 ◽  
Author(s):  
A Lau-Fr mbs ◽  
U Kroth ◽  
H Rabus ◽  
E Tegeler ◽  
G Ulm ◽  
...  

2012 ◽  
Vol 60 (8) ◽  
pp. 1219-1223
Author(s):  
Tae Jung Kim ◽  
Tae Ho Ghong ◽  
Jae Jin Yoon ◽  
Soon Yong Hwang ◽  
Nilesh Barange ◽  
...  

1993 ◽  
Vol 64 (2) ◽  
pp. 319-324 ◽  
Author(s):  
Masahito Katto ◽  
Ryusuke Matsumoto ◽  
Kou Kurosawa ◽  
Wataru Sasaki ◽  
Yasuo Takigawa ◽  
...  

1990 ◽  
Vol 61 (2) ◽  
pp. 728-731 ◽  
Author(s):  
Kou Kurosawa ◽  
Wataru Sasaki ◽  
Masahiro Okuda ◽  
Yasuo Takigawa ◽  
Kunio Yoshida ◽  
...  

2015 ◽  
Vol 86 (1) ◽  
pp. 013106 ◽  
Author(s):  
Reiner Thornagel ◽  
Rolf Fliegauf ◽  
Roman Klein ◽  
Simone Kroth ◽  
Wolfgang Paustian ◽  
...  

2019 ◽  
Vol 20 (3) ◽  
pp. 264-268
Author(s):  
P.O. Gentsar ◽  
M.V. Vuichyk ◽  
M.V. Isaev ◽  
P.O. Lischuk

In this paper the reflectance spectra and transmission spectra of p-Si (100) porous silicon (PS) and silicon wires in the spectral range of 200 ÷ 1800 nm were investigated. Pore size of PS was 5 μm (lpor Si layer) and 50 μm (lpor Si layer) with porosity of 45 %, 55 % and 65 %. The length of silicon wires varies from 5.5 μm, to 50 μm with a porosity of 60 %. The decrease in the band gap of p-Si (100) porous silicon and silicon wires which grown on both sides of p-Si (100) as compared to the single crystal p-Si (100) is explained by the quantum-sized effect that occurs in the investigated objects.


2006 ◽  
Vol 45 (1) ◽  
pp. 178 ◽  
Author(s):  
Minghong Yang ◽  
Alexandre Gatto ◽  
Norbert Kaiser

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