Anthracene fluorescence at low temperatures. II. Doped single crystals

1972 ◽  
Vol 25 (7) ◽  
pp. 1427 ◽  
Author(s):  
LE Lyons ◽  
LJ Warren
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Low Temperatures ◽  
Exciton Emission ◽  
Host Molecules ◽  
Impurity Bands

By the addition of dopants to single crystal anthraoene it is shown that many of the fluorescence bands additional to exciton emission are due to traces of 2-methylanthracene. Other impurity bands, apparently arising from locally disorientated host molecules, appear on doping with most of the following, the effects increasing in the order given: carbazole, biphenyl, p-terphenyl, anthraquinone, naphthalene, naphthacene, phenanthrene, pyrene, chrysene. The host vibronic bands were virtually unaffected by dopants, except for small line shifts in the presence of 2-methylanthracene.

Anthracene fluorescence at low temperatures. I. Purified single crystals

1972 ◽  
Vol 25 (7) ◽  
pp. 1411 ◽  
Author(s):  
LE Lyons ◽  
LJ Warren
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Fluorescence Spectrum ◽  
Low Temperatures ◽  
Free Exciton ◽  
Deformation Bands ◽  
Exciton Emission ◽  
Polarized Emission ◽  
Impurity Bands ◽  
Phonon Structure

The low-temperature fluorescence spectrum of purified vapour-grown anthracene single crystals is presented and the free-exciton emission distinguished from a number of defect or impurity bands present even in the purest crystals. In assigning the observed bands the symmetry of the active vibrations and the origin of background fluorescence and deformation bands are discussed. The phonon structure in the region of the fluorescence origin was found to be almost completely b-polarized. Emission of electronic origin (25103 cm-1) was too weak to be observed. Polarization ratios of the principal vibronio bands at 5.6 K are given.

Structure of tetrakis(dimethylamino)ethene (TDAE) at low temperatures

1995 ◽  
Vol 210 (7) ◽  
Author(s):  
J. Bruckmann ◽  
C. Krüger ◽  
H. Borrmann ◽  
A. Simon ◽  
H. Bock
Keyword(s):  
Crystal Structure ◽  
Phase Transitions ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Low Temperatures ◽  
Structure Refinement ◽  
Static Disorder ◽  
Structural Details ◽  
Different Temperatures

AbstractThe single crystal structure of TDAE was redetermined at different temperatures. Phase transitions are observed by warming the samples from low temperatures but never by cooling. Due to this special behavior it was possible to cool single crystals to 90 K. The data collected from such supercooled crystals resulted in a more precise and reliable structure refinement. Interesting structural details of the sterically overcrowded molecule are elucidated. The temperature dependence of the distortions of the nonplanar dimethylamino groups indicates dynamic behavior rather than static disorder.

Synthesis and Magnetic Properties of β-Cu3Fe4(VO4)6 Single Crystals

2015 ◽  
Vol 233-234 ◽  
pp. 137-140
Author(s):  
Dmitry A. Balaev ◽  
Oleg A. Bayukov ◽  
Evgeniy V. Eremin ◽  
M.S. Molokeev ◽  
Anatoly I. Pankrats ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Spin Glass ◽  
Single Crystals ◽  
Low Temperatures ◽  
Freezing Temperature ◽  
X Ray ◽  
Glass State ◽  
The Magnetic Field

β-Cu3Fe4(VO4)6 single crystals were synthesized. The X-ray, magnetic, Mössbauer, and EPR investigations of the crystals were fulfilled. It is established that single-crystal β-Cu3Fe4(VO4)6 is a spin glass at low temperatures. Freezing temperature varies considerably depending on the orientation of the magnetic field relative to the crystal axes. Spin-glass state is confirmed by the relaxation of the magnetization.

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

AN INTERNAL FRICTION STUDY OF N-H AND O-H PAIRS IN SINGLE CRYSTAL OF NIOBIUM AT LOW TEMPERATURES

1981 ◽  
Vol 42 (C5) ◽  
pp. C5-757-C5-761 ◽  
Author(s):  
R. Hanada ◽  
M. Shinohara ◽  
Y. Sado ◽  
H. Kimura
Keyword(s):  
Internal Friction ◽  
Single Crystal ◽  
Low Temperatures ◽  
Friction Study

Single crystal neutron diffraction studies of antiferromagnets at low temperatures in applied magnetic fields

1959 ◽  
Vol 20 (2-3) ◽  
pp. 180-184 ◽  
Author(s):  
W.C. Koehler ◽  
M. K. Wilkinson ◽  
J.W. Cable ◽  
E.O. Wollan
Keyword(s):  
Magnetic Fields ◽  
Neutron Diffraction ◽  
Single Crystal ◽  
Low Temperatures

Mounting an individual submicrometer sized single crystal

1996 ◽  
Vol 211 (6) ◽  
Author(s):  
R. B. Neder ◽  
M. Burghammer ◽  
Th. Grasl ◽  
H. Schulz
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystal ◽  
Single Crystals ◽  
High Vacuum ◽  
Nanometer Resolution ◽  
Micro Manipulator ◽  
Scanning Electron

AbstractWe developed a new micro manipulator for mounting individual sub-micrometer sized single crystals within a scanning electron microscope. The translations are realized via a commercially available piezomicroscope, adapted for high vacuum usage and realize nanometer resolution. With this novel instrument it is routinely possible to mount individual single crystals with sizes down to 0.1

Study of potential oscillations during reaction of an aluminium single crystal with an aqueous KOH solution

1990 ◽  
Vol 55 (2) ◽  
pp. 345-353 ◽  
Author(s):  
Ivan Halaša ◽  
Milica Miadoková
Keyword(s):  
Aqueous Solutions ◽  
Single Crystal ◽  
Single Crystals ◽  
Periodic Potential ◽  
Optimum Conditions ◽  
Potential Oscillations ◽  
Dilute Aqueous Solutions ◽  
Experimental Findings ◽  
Kinetics Of

The authors investigated periodic potential changes measured on oriented sections of Al single crystals during spontaneous dissolution in dilute aqueous solutions of KOH, with the aim to find optimum conditions for the formation of potential oscillations. It was found that this phenomenon is related with the kinetics of the reaction investigated, whose rate also changed periodically. The mechanism of the oscillations is discussed in view of the experimental findings.

Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

1989 ◽  
Vol 54 (11) ◽  
pp. 2951-2961 ◽  
Author(s):  
Miloslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Single Crystals ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Preferred Orientation ◽  
Rotating Disc ◽  
Dissolution Rates ◽  
Rates Of Growth ◽  
Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

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