Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (Bi, Na)TiO3–BaTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by pulsed laser depositions

2021 ◽  
Vol 130 (13) ◽  
pp. 134102
Author(s):  
Keisuke Ishihama ◽  
Takao Shimizu ◽  
Wakiko Yamaoka ◽  
Risako Tsurumaru ◽  
Shintaro Yoshimura ◽  
...  
2011 ◽  
Vol 485 ◽  
pp. 195-198 ◽  
Author(s):  
Hidenori Tanaka ◽  
Tomoaki Yamada ◽  
Sintaro Yasui ◽  
Keisuke Yamato ◽  
Satoshi WADA ◽  
...  

Crystal structure and electrical properties were investigated for Bi (Mg0.5Ti0.5)O3 films grown on (111)c- and (100)c-oriented SrRuO3//SrTiO3 substrates by pulsed laser deposition. Epitaxial films consisting of a single phase of perovskite were obtained on the (111) substrates. Additionally, the ferroelectricity was ascertained not only from the polarization - electric field hysteresis loops, but also from the piezoelectric response.


2016 ◽  
Vol 10 (4) ◽  
pp. 395-400 ◽  
Author(s):  
Deepali Kelkar ◽  
◽  
Ashish Chourasia ◽  
◽  

Poly(3,4-ethylenedioxythiophene) (PEDOT) was chemically synthesized, undoped and then re-doped using FeCl3 as well as camphorsulfonic acid (CSA). FT-IR results confirm the nature of the synthesized and doped samples. XRD analysis indicates crystal structure modification after doping and was also used to calculate crystallinity of samples. Crystallinity increases after FeCl3 doping, whereas it reduces due to CSA doping. TGA-DTA results show reduction in Tg value for FeCl3 doped sample while it increases for CSA doped samples compared to that of undoped PEDOT. Reduction in Tg indicates plasticizing effect of FeCl3 whereas increase in Tg show anti-plasticizing effect of CSA in PEDOT. Conductivity value () increases by two orders of magnitude after doping. Log vs. 1/T graph show metallic nature of undoped PEDOT above 308 K, however both doped samples show semiconducting nature from 301 to 383 K.


2008 ◽  
Vol 103 (2) ◽  
pp. 023915 ◽  
Author(s):  
R. K. Rakshit ◽  
S. K. Bose ◽  
R. Sharma ◽  
R. C. Budhani ◽  
T. Vijaykumar ◽  
...  

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.


2004 ◽  
Vol 453-454 ◽  
pp. 291-295 ◽  
Author(s):  
J.C Orlianges ◽  
C Champeaux ◽  
A Catherinot ◽  
A Pothier ◽  
P Blondy ◽  
...  

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