Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Pulsed laser deposition and characterization of conductive RuO2 thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1433-1436 ◽  
Author(s):  
A. Iembo ◽  
F. Fuso ◽  
E. Arimondo ◽  
C. Ciofi ◽  
G. Pennelli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Characteristics ◽  
Laser Deposition ◽  
X Ray ◽  
Substrate Interface

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

scholarly journals Preparation and Characterization ofSb2Te3Thin Films by Coevaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Bin Lv ◽  
Songbai Hu ◽  
Wei Li ◽  
Xia Di ◽  
Lianghuan Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Electrical Transport ◽  
Film Surface ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Conductivity Measurements ◽  
X Ray ◽  
Thin Film Surface

Deposition ofSb2Te3thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper.Sb2Te3thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred fromin situelectrical conductivity measurements. The results indicate that as-grownSb2Te3thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

Pulsed-Laser Deposition of TiNi Shape Memory Alloy Thin Films

2001 ◽  
Vol 672 ◽  
Author(s):  
X.Y. Chen ◽  
Y.F. Lu ◽  
Z.M. Ren ◽  
L. Zhang ◽  
J.P. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Deposited Films

ABSTRACTThin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is –20.8°C.

Study of Optical and Electrical Properties of Tin-Doped Magnesium Phthalocyanine Thin Films Grown by Thermal Co-Evaporation

2016 ◽  
Vol 848 ◽  
pp. 80-84
Author(s):  
Kitipong Mano ◽  
Narin Tammarugwattana ◽  
Navaphun Kayunkid ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
Carrier Mobility ◽  
Strong Dependence ◽  
Chemical Properties ◽  
Film Surface ◽  
Beta Phase ◽  
Tin Metal

The aim of this work is to investigate specific properties of tin-doped magnesium phthalocyanine (Sn-doped MgPc) thin films grown by thermal co-evaporation. Morphological, optical and chemical properties of the doped-films were characterized by atomic force microscopy (AFM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of ITO/Sn-doped-MgPc/Al devices such as carrier mobility and carrier concentration were extracted from current-voltage and capacitance-voltage measurements. Morphology of the doped films shows strong dependence on the existence of Sn in the doped films as clearly observed by changing of features of the film surface e.g. surface grain size and roughness. Optical absorption spectra of all conditions provide regular three dominant beta-phase peaks at 352, 640 and 691 nm corresponding to absorption from B-band and Q-band, respectively. The electrical properties obtained from ITO/Sn-doped MgPc/Al device suggest that the enhancement of the current flow in the doped device is a result from the increase of both carrier mobility and carrier concentration. Moreover, photoelectron analysis reveals two formations of Sn dopant in MgPc those are tin metal and derivative of tin oxide.

Structural Dependence of Electrical Conductivity of thin Tellurium Films

1973 ◽  
Vol 31 ◽  
pp. 52-53
Author(s):  
Mumtaz A. Dinno ◽  
Manuel Schwartz ◽  
Beverly Giammara
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Room Temperature ◽  
Extensive Study ◽  
Structural Studies ◽  
Nucleation Sites ◽  
Electron Transport Properties ◽  
Deposited Films

Capers and White made an extensive study of the growth of tellurium thin films deposited on different substrate materials but did not measure the electrical properties of the deposited films. Berryman studied the effects of film thickness, deposition rate, and substrate temperature on the electrical properties but there is no evidence that these results were correlated with structural studies. Dutton presented a method for growing large grains using a gold monolayer as nucleation sites and for these special films related electron transport properties with structure. The present study undertakes the determination of conductivity over a range of thicknesses extending from 350 Å to 2800 Å on a substrate initially at room temperature, for both annealed and nonannealed films. In addition, some work was done with quenched and heated substrates at 700 Å thickness.

Pulsed Laser Deposition of NbNx (0 ≤ x ≤ 1.4) Thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Elevated Temperatures ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Critical Currents ◽  
Fused Silica ◽  
Critical Temperatures ◽  
Structure Morphology ◽  
Deposited Films

ABSTRACTThe structure, morphology, and electrical properties of pulsed laser deposited NbNx (0 ≤ x ≤ 1.4) thin films have been investigated. Films were deposited from Nb metal targets on oriented MgO (100) and amorphous fused silica substrates as a function of substrate temperature and ambient pressure. A reducing atmosphere (N2 with 10% H2) was used to prevent oxide formation. At elevated temperatures, the N/Nb ratios of films deposited on MgO, as determined from Rutherford Backscattering Spectroscopy, increased from 0 −1.4 as the ambient pressure was varied from vacuum to 200 mTorr, respectively. NbNx films (x=l) were deposited at 600 °C and 60 mTorr. Both the structure and electrical properties of the deposited films varied strongly with the substrate type. On fused silica, NbN films were poorly crystalline with low critical temperatures (Tc ∼ 8 – 11 K) and low critical currents (Jc (4.2 K) ∼ 2 MA/cm2), whereas on MgO the NbN films were oriented and had better transport properties (Tc ∼ 16.4 K and Jc (4.2 K) = 7.1 MA/cm2).

Study of Optical and Electrical Properties of Bismuth-Doped Copper Phthalocyanine Thin Films Grown by Thermal Co-Evaporation

2015 ◽  
Vol 1131 ◽  
pp. 49-52 ◽  
Author(s):  
Kitipong Mano ◽  
Narin Tammarugwattana ◽  
Navaphun Kayunkid ◽  
Chaloempol Saributr ◽  
Pitiporn Thanomngam ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
Carrier Mobility ◽  
Copper Phthalocyanine ◽  
Strong Dependence ◽  
Chemical Properties ◽  
Film Surface ◽  
Chemical Information

Bismuth-doped copper phthalocyanine (Bi-doped CuPc) thin films were grown by organic-source thermal co-evaporation under five different deposition rates. Morphological, optical and chemical properties of the doped-films were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of ITO/Bi-doped-CuPc/Al devices i.e. carrier mobility and carrier concentration were characterized by current-voltage and capacitance-voltage measurements. Morphology of the doped films shows strong dependence on preparation conditions, as clearly observed by features of film surface i.e surface grain size and roughness. Optical absorption spectra of all doping conditions provide regular three dominant α-phase peaks at 339, 620 and 695 nm corresponding to absorption from B-band and Q-band, respectively. Electrical properties exhibit the enhancement of the film conductivity due to increase of both carrier mobility and carrier concentration with higher Bi-doping level. Moreover, photoelectron analysis reveals chemical information of the metal dopant in the host material.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Sign in / Sign up

Export Citation Format

Share Document