Magnetic polarization selective spectroscopy of magnetic thin films probed by wideband crossed microstrip circuit in GHz regime

2022 ◽  
Vol 93 (1) ◽  
pp. 013901
Author(s):  
Tomonori Arakawa ◽  
Yoichi Shiota ◽  
Keisuke Yamada ◽  
Teruo Ono ◽  
Seitaro Kon
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.


2008 ◽  
Vol 42 (2) ◽  
pp. 125-128
Author(s):  
J. F. Al-Sharab ◽  
J. E. Wittig ◽  
G. Bertero ◽  
T. Yamashita ◽  
J. Bentley ◽  
...  

2000 ◽  
Vol 454-456 ◽  
pp. 723-728 ◽  
Author(s):  
H. Magnan ◽  
P. Le Fèvre ◽  
A. Midoir ◽  
D. Chandesris ◽  
H. Jaffrès ◽  
...  

2010 ◽  
Vol 46 (2) ◽  
pp. 630-633 ◽  
Author(s):  
Zung-Hang Wei ◽  
Chi-Kuen Lo ◽  
Da-Ren Liu ◽  
Yi-Ping Hsieh ◽  
Yun-Ruei Lee ◽  
...  

2003 ◽  
Vol 91 (9) ◽  
Author(s):  
Andreas Moser ◽  
Andreas Berger ◽  
David T. Margulies ◽  
Eric E. Fullerton

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.


1995 ◽  
Vol 77 (12) ◽  
pp. 6416-6425 ◽  
Author(s):  
J. G. Th. te Lintelo ◽  
J. C. Lodder

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