scholarly journals The Development of Spark Discharges in Hydrogen

1969 ◽  
Vol 22 (2) ◽  
pp. 155 ◽  
Author(s):  
MC Cavenor ◽  
J Meyer

Streak photography has been used to supplement the earlier shutter photo. graphic investigation of Doran and Meyer (1967) using the same coaxial cable discharge circuit. Additional information has also been obtained from measurement of the potential distribution between the electrodes at two stages in the spark development. Redistribution of space charge is shown to give rise firstly to a transient diffuse glow discharge that has a close similarity with a normal d.c. glow discharge. It has also been shown that, even while the diffuse glow discharge expands, a partial constriction occurs in which most of the current flows along a narrow axial column. The resulting maximum in electron density eventually causes a rapid increase in dissociation of molecular hydrogen on the axis of the discharge brought about by a rise in the gas temperature. Owing to its greater electrical conductivity this axial column soon carries the entire current and the discharge becomes filamentary though still being maintained by a high cathode fall field, which exists until a sudden change in the cathode mechanism gives rise to the low voltage arc channel. Both the filamentary glow and arc columns are observed to expand according to an r cc ti law.

2015 ◽  
Vol 38-39 (1) ◽  
pp. 11-22 ◽  
Author(s):  
G. Lj. Majstorović ◽  
N. M. Šišović

Abstract We report the results of optical emission spectroscopy measurements of rotational Trot and translational (gas) temperature of deuterium molecules. The light source was a low-voltage high-pressure hollow cathode (HC) glow discharge with titanium cathode operated in deuterium. The rotational temperature of excited electronic states of D2 was determined from the intensity distribution in the rotational structure of Q-branches of the two Fulcher-α diagonal bands: [ν′ = ν″ = 2] and [ν′ =ν″ = 3]. The population of the excited energy levels, determined from relative line intensities, was used to derive the radial distributions of the temperature of the excited and the ground state of the deuterium molecule.


2021 ◽  
pp. 1-10
Author(s):  
Wang Gao ◽  
Hongtao Deng ◽  
Xun Zhu ◽  
Yuan Fang

Harmful information identification is a critical research topic in natural language processing. Existing approaches have been focused either on rule-based methods or harmful text identification of normal documents. In this paper, we propose a BERT-based model to identify harmful information from social media, called Topic-BERT. Firstly, Topic-BERT utilizes BERT to take additional information as input to alleviate the sparseness of short texts. The GPU-DMM topic model is used to capture hidden topics of short texts for attention weight calculation. Secondly, the proposed model divides harmful short text identification into two stages, and different granularity labels are identified by two similar sub-models. Finally, we conduct extensive experiments on a real-world social media dataset to evaluate our model. Experimental results demonstrate that our model can significantly improve the classification performance compared with baseline methods.


2017 ◽  
Vol 24 (9) ◽  
pp. 093519 ◽  
Author(s):  
Wenzheng Liu ◽  
Shuai Zhao ◽  
Jiangqi Niu ◽  
Maolin Chai

1999 ◽  
Vol 596 ◽  
Author(s):  
T. Haneder ◽  
W. Hönlein ◽  
H. Bachhofer ◽  
M. Ullmann ◽  
H. von Philipsborn ◽  
...  

AbstractMETS (Metal Ferroelectric Insulator Semiconductor) capacitors were fabricated using CSD (Chemical Solution Deposition). Thin layers of CeO2 were deposited as an insulating buffer layer on Si(100) substrates and SrBi2Ta2O9 (SBT) was used as a ferroelectric layer. Pt electrodes were deposited by evaporation on top of the SBT layer. At constant SBT thickness the thickness of the CeO2 layer was varied to investigate the effects of the change in capacitance ratio between the ferroelectric and the buffer layer. XRD spectra were used to determine the phase of the SBT and the quality of the CeO2 layer. C(V) measurements showed the ferroelectric nature of the SBT. Additional information was provided by TEM and EDX analysis.Some samples showed a memory window as big as 1.6 Volt at a moderate voltage sweep from −3.5 to +3.5 Volt. Interface state density is approximately 2×1011/cm2 eV and remanent polarization was found to be in the range of 0.3 μC/cm2. These results are already very promising in terms of fabricating a Ferroelectric FET. Some basic considerations with respect to the development of IT memory cells on the basis of this kind of transistor will also be presented.


2001 ◽  
Vol 29 (5) ◽  
pp. 796-801 ◽  
Author(s):  
Yu.D. Korolev ◽  
V.G. Geyman ◽  
O.B. Frants ◽  
I.A. Shemyakin ◽  
K. Frank ◽  
...  
Keyword(s):  

1987 ◽  
Vol 47 (5) ◽  
pp. 1111-1114
Author(s):  
V. V. Azharonok ◽  
V. V. Mel'nikov ◽  
D. K. Skutov ◽  
I. I. Filatova ◽  
N. I. Chubrik ◽  
...  

2013 ◽  
Vol 41 (8) ◽  
pp. 2400-2407
Author(s):  
Romaric Landfried ◽  
Richard Andlauer ◽  
Philippe Dessante ◽  
Michael J. Kirkpatrick ◽  
Thierry Leblanc ◽  
...  

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