From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.
Universal high-frequency behavior of periodically driven systems: from dynamical stabilization to Floquet engineering