Ferroelectric thin film on a silicon-based pn junction: Coupling photovoltaic properties

2016 ◽  
Vol 500 (1) ◽  
pp. 250-258 ◽  
Author(s):  
Xuedong Li ◽  
Xuemin Wang ◽  
Liping Peng ◽  
Kuibao Zhang ◽  
Weidong Wu ◽  
...  
2019 ◽  
Vol 2019 (19) ◽  
pp. 6231-6234
Author(s):  
Jingtian Liu ◽  
Shuming Chen ◽  
Hui Huang ◽  
Ke Xiao ◽  
Xiaowen Chen

2013 ◽  
Vol 28 (4) ◽  
pp. 436-440 ◽  
Author(s):  
Yi-Jun XIE ◽  
Yi-Ping GUO ◽  
Wen DONG ◽  
Bing GUO ◽  
Hua LI ◽  
...  

2009 ◽  
Vol 24 (4) ◽  
pp. 737-740 ◽  
Author(s):  
Dong-Sheng WANG ◽  
Tao YU ◽  
An HU ◽  
Di WU ◽  
Ai-Dong LI ◽  
...  

2011 ◽  
Vol 520 (1) ◽  
pp. 646-650 ◽  
Author(s):  
A. Oubelkacem ◽  
I. Essaoudi ◽  
A. Ainane ◽  
M. Saber ◽  
F. Dujardin

2002 ◽  
Vol 91 (8) ◽  
pp. 4973-4982 ◽  
Author(s):  
L. Lahoche ◽  
V. Lorman ◽  
S. B. Rochal ◽  
J. M. Roelandt

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Parisa Abbasi ◽  
Mohsen Ameri ◽  
Mohammad Reza Riahi Dehkordi

The metal complexes ( (phen)2(phendione))(PF6)2(1), [ (phen)(bpy)(phendione))(PF6)2(2), and ( (bpy)2(phendione))(PF6)2(3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η) of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2) with a short-circuit photocurrent density () of 3.42 mA cm−2, an open-circuit photovoltage () of 0.622 V, and a fill factor (ff) of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.


2009 ◽  
Vol 149 (29-30) ◽  
pp. 1176-1179 ◽  
Author(s):  
Z.X. Lu ◽  
B.H. Teng ◽  
X.H. Lu ◽  
X.J. Zhang ◽  
C.D. Wang

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