Raman Study at Low Temperature of Polyiodidesin the Series DIPSφ4

1982 ◽  
Vol 86 (1) ◽  
pp. 63-69 ◽  
Author(s):  
E. Faulques ◽  
E. Rzepka ◽  
S. Lefrant ◽  
H. Strzelecka
Keyword(s):  
Low Temperature ◽  
Raman Study

Raman study of low temperature phase transitions in the cubic perovskite CH3NH3PbCI3

1998 ◽  
Vol 64 (4) ◽  
pp. 179-190 ◽  
Author(s):  
A. Maaej ◽  
M. Bahri ◽  
Y. Abid ◽  
N. Jaidane ◽  
Z. B. Lakhdar ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Low Temperature ◽  
Temperature Phase ◽  
Raman Study ◽  
Low Temperature Phase

Low-temperature Raman study of zinc-doped lithium niobate crystal powders

2003 ◽  
Vol 78 (2) ◽  
pp. 358-362 ◽  
Author(s):  
M.-L Hu ◽  
C.-T Chia ◽  
J.Y Chang ◽  
W.-S Tse ◽  
J.-T Yu
Keyword(s):  
Low Temperature ◽  
Lithium Niobate ◽  
Lithium Niobate Crystal ◽  
Raman Study

Resonant Raman study of low-temperature exciton localization in GaAs quantum wells

1987 ◽  
Vol 35 (6) ◽  
pp. 2892-2895 ◽  
Author(s):  
J. E. Zucker ◽  
A. Pinczuk ◽  
D. S. Chemla ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Exciton Localization ◽  
Raman Study ◽  
Resonant Raman

X-ray and Raman study of the low temperature NH4MnF3structure; evidence of librational motion of the NH4+ion

1993 ◽  
Vol 5 (3) ◽  
pp. 283-300 ◽  
Author(s):  
M A Laguna ◽  
M L Sanjuan ◽  
V M Orera ◽  
J Rubin ◽  
E Palacios ◽  
...  
Keyword(s):  
Low Temperature ◽  
X Ray ◽  
Librational Motion ◽  
Raman Study

scholarly journals Magnetite: Raman study of the high-pressure and low-temperature effects

2005 ◽  
Vol 97 (10) ◽  
pp. 10A922 ◽  
Author(s):  
L. V. Gasparov ◽  
D. Arenas ◽  
K.-Y. Choi ◽  
G. Güntherodt ◽  
H. Berger ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Temperature Effects ◽  
Raman Study

Low-temperature raman study on ThSiO4 single crystal and related infrared spectra at room temperature

1986 ◽  
Vol 64 (2) ◽  
pp. 181-187 ◽  
Author(s):  
M.P. Lahalle ◽  
J.C. Krupa ◽  
M. Lepostollec ◽  
J.P. Forgerit
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Infrared Spectra ◽  
Room Temperature ◽  
Raman Study

Early Stage of Polycrystalleve Growth of Ge and SiGe by Reactive Thermal Cvd from GeF4 and Si2H6

1994 ◽  
Vol 358 ◽  
Author(s):  
Jun-Ichi Hanna ◽  
Takayuki Ohuchi ◽  
Masaji Yamamoto
Keyword(s):  
Low Temperature ◽  
Grain Growth ◽  
Early Stage ◽  
Island Growth ◽  
Sem Observation ◽  
Thermal Cvd ◽  
New Type ◽  
Raman Study

ABSTRACTWe have investigated the structure and crystallinity of poly SiGe and Ge films in the early stage of their growth prepared at < 450°C by means of a new type of thermal CVD from GeF4 and Si2H6. Raman study and SEM observation of the films revealed that the nucleation of crystallites took place directly on the substrate, followed by the grain growth in a manner of island growth. Thus, the crystallinity of the films is well established even in the very early stage of the growth, probably < 10 nm in thickness, in contrast to the poly Si growth in the low-temperature CVD precesses.

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