Resonant Raman study of low-temperature exciton localization in GaAs quantum wells

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

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Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method

Applied Physics Letters ◽

10.1063/1.3254230 ◽

2009 ◽

Vol 95 (16) ◽

pp. 162111 ◽

Cited By ~ 19

Author(s):

Jung-Seung Yang ◽

Hassanet Sodabanlu ◽

Masakazu Sugiyama ◽

Yoshiaki Nakano ◽

Yukihiro Shimogaki

Keyword(s):

Low Temperature ◽

Quantum Wells ◽

Vapor Phase ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Intersubband Transition ◽

Pulse Injection ◽

Organic Vapor ◽

Transition Wavelength ◽

Metal Organic

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Exciton localization in group-III nitride quantum wells

Physical Review B ◽

10.1103/physrevb.59.9783 ◽

1999 ◽

Vol 59 (15) ◽

pp. 9783-9786 ◽

Cited By ~ 7

Author(s):

V. I. Litvinov ◽

M. Razeghi

Keyword(s):

Quantum Wells ◽

Group Iii ◽

Exciton Localization ◽

Group Iii Nitride

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Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

MRS Proceedings ◽

10.1557/proc-241-239 ◽

1991 ◽

Vol 241 ◽

Author(s):

Y. Hwang ◽

D. Zhang ◽

T. Zhang ◽

M. Mytych ◽

R. M. Kolbas

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Barrier Layer ◽

Molecular Beam ◽

Optical Quality ◽

First Order ◽

Gaas Buffer Layer ◽

Low Temperature Gaas ◽

Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

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