Rapid Sliding on a Thermoelastic Half-Space: Rigid Die with Two Contact Surfaces

2015 ◽  
Vol 38 (5) ◽  
pp. 526-542
Author(s):  
Louis M. Brock
Keyword(s):  
Half Space ◽  
Contact Surfaces ◽  
Rigid Die

scholarly journals Grinding and buffing of work surfaces in crankshafts and cams of camshafts by endless diamond belt

2018 ◽  
Vol 2018 (1) ◽  
pp. 45-48
Author(s):  
А. Шоев ◽  
A. Shoev
Keyword(s):  
Half Space ◽  
Theoretical Basis ◽  
Transverse Section ◽  
Elastic Half Space ◽  
Surface Grinding ◽  
Work Surface ◽  
Belt Width ◽  
Rigid Die ◽  
Grinding And Polishing

A technology and a tool for processing work surfaces in crankshafts and cams of camshafts by endless diamond belts are considered. The characteristics of endless diamond belts and their potentialities in assurance of roughness and efficiency at work surface grinding and polishing are shown. The purposefulness in assurance of an optimum curvilinear transverse section of cams in camshafts by grinding with endless belts is defined. It is shown, that it is possible to control a curvilinear profile of cams in camshafts at the expense of a belt width and a belt tension. It is based on a theoretical basis of the interaction of a rigid die (cam) with the elastic half-space (belt). An optimum curvilinearity of the transverse section of a cam ensures the increase of its life.

On the rigid-die indentation into a perfectly plastic half-space with allowance for shearing forces

2001 ◽  
Vol 46 (7) ◽  
pp. 513-516 ◽  
Author(s):  
D. D. Ivlev ◽  
L. A. Maksimova ◽  
R. I. Nepershin
Keyword(s):  
Half Space ◽  
Perfectly Plastic ◽  
Rigid Die

TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

2003 ◽  
Vol 764 ◽  
Author(s):  
D.N. Zakharov ◽  
Z. Liliental-Weber ◽  
A. Motayed ◽  
S.N. Mohammad
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
X Ray ◽  
Electron Energy Loss Spectrometry ◽  
Resolution Electron ◽  
Order Of Magnitude ◽  
Contact Surfaces ◽  
Electron Energy Loss ◽  
Magnitude Difference

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

On a technique for deriving explicit transfer matrices of orthotropic layers

2015 ◽  
Vol 37 (4) ◽  
pp. 303-315 ◽  
Author(s):  
Pham Chi Vinh ◽  
Nguyen Thi Khanh Linh ◽  
Vu Thi Ngoc Anh
Keyword(s):  
Wave Propagation ◽  
Explicit Form ◽  
Half Space ◽  
Transfer Matrix ◽  
Rayleigh Waves ◽  
Secular Equation ◽  
Transfer Matrices ◽  
Orthotropic Layer ◽  
Wave Propagation Problem ◽  
Arbitrary Thickness

This paper presents  a technique by which the transfer matrix in explicit form of an orthotropic layer can be easily obtained. This transfer matrix is applicable for both the wave propagation problem and the reflection/transmission problem. The obtained transfer matrix is then employed to derive the explicit secular equation of Rayleigh waves propagating in an orthotropic half-space coated by an orthotropic layer of arbitrary thickness.

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