A New Low-power, High-Q, Wide Tunable CMOS Active Inductor for RF Applications

2015 ◽  
Vol 62 (2) ◽  
pp. 265-273 ◽  
Author(s):  
Sehmi Saad ◽  
Mongia Mhiri ◽  
Aymen Ben Hammadi ◽  
Kamel Besbes
2012 ◽  
Vol 6 (7) ◽  
pp. 788 ◽  
Author(s):  
Y.-J. Jeong ◽  
Y.-M. Kim ◽  
H.-J. Chang ◽  
T.-Y. Yun

2011 ◽  
Vol 46 (12) ◽  
pp. 2920-2932 ◽  
Author(s):  
Ahmad Mirzaei ◽  
Hooman Darabi ◽  
David Murphy
Keyword(s):  

2021 ◽  
Author(s):  
Yan Liang ◽  
Wanrong Zhang ◽  
Hongyun Xie ◽  
Dongyue Jin ◽  
Weicong Na ◽  
...  

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  


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