Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

2020 ◽  
Vol 67 (9) ◽  
pp. 837-842
Author(s):  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Munaza Munsif ◽  
Shahzeb Malik ◽  
Noor Ul Islam ◽  
...  
1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.


2021 ◽  
Vol 33 (14) ◽  
pp. 2006302
Author(s):  
Yarong He ◽  
Jiaxu Yan ◽  
Lei Xu ◽  
Bangmin Zhang ◽  
Qian Cheng ◽  
...  

2014 ◽  
Vol 50 (11) ◽  
pp. 911-920 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu. Karpov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
...  

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