Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices

2016 ◽  
Vol 171 (1-2) ◽  
pp. 77-86 ◽  
Author(s):  
N. Manikanthababu ◽  
N. Arun ◽  
M. Dhanunjaya ◽  
S.V.S. Nageswara Rao ◽  
A. P. Pathak
Keyword(s):  
Electrical Properties ◽  
Gamma Irradiation ◽  
Mos Devices

scholarly journals Investigation on Synthesis, Structural and Electrical properties of Zinc Ferrite on Gamma Irradiation

2020 ◽  
Vol 1644 ◽  
pp. 012017
Author(s):  
Santosh Kalunge ◽  
Ashok V. Humbe ◽  
Mangesh V. Khedkar ◽  
S. D. More ◽  
A. P. Keche ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gamma Irradiation ◽  
Zinc Ferrite ◽  
Structural And Electrical Properties

Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2

2007 ◽  
Vol 996 ◽  
Author(s):  
Takuya Sugawara ◽  
Raghavasimhan Sreenivasan ◽  
Yasuhiro Oshima ◽  
Paul C. McIntyre
Keyword(s):  
Electrical Properties ◽  
Interface Layer ◽  
Hafnium Dioxide ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Interface Layers ◽  
Silicon Based

AbstractGermanium and hafnium-dioxide (HfO2) stack structures' physical and electrical properties were studied based on the comparison of germanium and silicon based metal-oxide-semiconductor (MOS) capacitors' electrical properties. In germanium MOS capacitor with oxide/oxynitride interface layer, larger negative flat-band-voltage (Vfb) shift compared with silicon based MOS capacitors was observed. Secondary ion mass spectrum (SIMS) characteristics of HfO2-germanium stack structure with germanium oxynitride (GeON) interfacial layer showed germanium out diffusion into HfO2. These results indicate that the germanium out diffusion into HfO2 would be the origin of the germanium originated negative Vfb shift. Using Ta3N5 layer as a germanium passivation layer, reduced Vfb shift and negligible hysteresis were observed. These results suggest that the selection of passivation layer strongly influences the electrical properties of germanium based MOS devices.

Electrical properties of MOS devices made with SILO technology

1982 ◽  
Author(s):  
J. Hui ◽  
T.Y. Chiu ◽  
S. Wong ◽  
W.G. Oldham
Keyword(s):  
Electrical Properties ◽  
Mos Devices

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

2013 ◽  
Vol 740-742 ◽  
pp. 741-744 ◽  
Author(s):  
Heiji Watanabe ◽  
Daisuke Ikeguchi ◽  
Takashi Kirino ◽  
Shuhei Mitani ◽  
Yuki Nakano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Uv Irradiation ◽  
Uv Light ◽  
Interface State ◽  
State Density ◽  
Mos Devices ◽  
Novel Approach ◽  
Subsequent Thermal Annealing ◽  
Thermally Grown

We report on the harmful impact of ultraviolet (UV) light irradiation on thermally grown SiO2/4H-SiC(0001) structures and its use in subsequent thermal annealing for improving electrical properties of SiC-MOS devices. As we previously reported [1], significant UV-induced damage, such as positive flatband voltage shift and hysteresis in capacitance-voltage curves as well as increased interface state density, was observed for SiC-MOS devices with thermally grown oxides. Interestingly, the subsequent annealing of damaged SiO2/SiC samples resulted in superior electrical properties to those for untreated (fresh) devices. These findings imply that UV irradiation of the SiO2/SiC structure is effective for eliciting pre-existing carbon-related defects and transforming them into a simple configuration that can be easily passivated by thermal treatment.

Sign in / Sign up

Export Citation Format

Share Document