Effects of Post Deposition Annealing Ambient on Interfacial and Electrical Properties of HfO2/Ge3N4 Gate Stacks on Ge Mos Devices

2018 ◽  
Keyword(s):  
Electrical Properties ◽  
Gate Stacks ◽  
Post Deposition Annealing ◽  
Mos Devices ◽  
Post Deposition

Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks

2019 ◽  
Vol 675 ◽  
pp. 16-22 ◽  
Author(s):  
Kumar Mallem ◽  
S.V. Jagadeesh Chandra ◽  
Minkyu Ju ◽  
Subhajit Dutta ◽  
Swagata Phanchanan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Atmosphere ◽  
Gate Stacks ◽  
Post Deposition Annealing ◽  
Post Deposition

Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Post deposition annealing effect on the electrical properties of β-Ga2O3 Nanowire

2020 ◽  
Vol 31 (22) ◽  
pp. 20378-20386
Author(s):  
Shagolsem Romeo Meitei ◽  
Rajshree Rajkumari ◽  
Naorem Khelchand Singh
Keyword(s):  
Electrical Properties ◽  
Annealing Effect ◽  
Post Deposition Annealing ◽  
Post Deposition

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

2020 ◽  
Vol 13 (2) ◽  
pp. 026504 ◽  
Author(s):  
Daigo Kikuta ◽  
Kenji Ito ◽  
Tetsuo Narita ◽  
Tetsu Kachi
Keyword(s):  
Post Deposition Annealing ◽  
Gate Oxides ◽  
Mos Devices ◽  
Post Deposition
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