Electronic energy loss-induced effects in Fe85B15amorphous: Alloys irradiated by high energy heavy ions

1989 ◽  
Vol 110 (1-2) ◽  
pp. 109-112 ◽  
Author(s):  
A. Audouard ◽  
E. Balanzat ◽  
J. C. Jousset ◽  
G. Fuchs ◽  
D. Lesueur ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
High Energy ◽  
Electronic Energy

Effects of electronic energy loss in crystalline and amorphous Ni3B irradiated with high-energy heavy ions

1991 ◽  
Vol 63 (3) ◽  
pp. 727-738 ◽  
Author(s):  
A. Audouard ◽  
E. Balanzat ◽  
J. C. Jousset ◽  
A. Chamberod ◽  
G. Fuchs ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
High Energy ◽  
Electronic Energy

Effects of Electronic Energy Loss in Amorphous Fe-B Alloy Irradiated with High-Energy Heavy Ions

1992 ◽  
Vol 97-99 ◽  
pp. 631-640 ◽  
Author(s):  
A. Audouard ◽  
E. Balanzat ◽  
J.C. Jousset ◽  
Gunter Fuchs ◽  
Donald R. Lesueur ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
High Energy ◽  
Electronic Energy

Effect of high electronic energy loss of 100MeV gold heavy ions in copper chalcogenides (CuX, X=S, Se) at nanoscale: Opto-electronic properties study

2009 ◽  
Vol 355 (31-33) ◽  
pp. 1653-1658 ◽  
Author(s):  
Ramphal Sharma ◽  
Abhay Abhimanyu Sagade ◽  
Sunil Rameshgir Gosavi ◽  
Yuvraj Ganesh Gudage ◽  
Arindam Ghosh ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electronic Properties ◽  
Heavy Ions ◽  
Electronic Energy ◽  
Copper Chalcogenides

Growth phenomenon in amorphous solids irradiated with GeV heavy ions: Electronic-energy-loss dependence of the initial growth rate

1996 ◽  
Vol 54 (22) ◽  
pp. 15690-15694 ◽  
Author(s):  
A. Audouard ◽  
J. Dural ◽  
M. Toulemonde ◽  
A. Lovas ◽  
G. Szenes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Energy Loss ◽  
Heavy Ions ◽  
Amorphous Solids ◽  
Electronic Energy ◽  
Initial Growth ◽  
Initial Growth Rate ◽  
Growth Phenomenon

Defect Creation by Electronic Processes in MgO Bombarded with GeV Heavy Ions

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Beranger ◽  
P. Thevenard ◽  
R. Bremer ◽  
E. Balanzat
Keyword(s):  
Cross Sections ◽  
Heavy Ions ◽  
Oxygen Vacancies ◽  
Unit Area ◽  
High Energy ◽  
Electronic Energy ◽  
High Fluences ◽  
Refractory Oxides ◽  
Defect Creation ◽  
Absorption Measurements

AbstractTo study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

High-Energy Heavy-Ion Irradiations of Fe 85 B 15 Amorphous Alloy: Evidence for Electronic Energy Loss Effect

1987 ◽  
Vol 3 (3) ◽  
pp. 327-331 ◽  
Author(s):  
A Audouard ◽  
E Balanzat ◽  
G Fuchs ◽  
J. C Jousset ◽  
D Lesueur ◽  
...  
Keyword(s):  
Amorphous Alloy ◽  
Energy Loss ◽  
Heavy Ion ◽  
High Energy ◽  
Electronic Energy ◽  
Loss Effect

scholarly journals Swelling of SiO2 Quartz Induced by Energetic Heavy Ions

1997 ◽  
Vol 504 ◽  
Author(s):  
C. Trautmann ◽  
J. M. Costantini ◽  
A. Meftah ◽  
K. Schwartz ◽  
J. P. Stoquert ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
Sample Surface ◽  
Critical Energy ◽  
Electronic Energy ◽  
Step Height ◽  
Border Line ◽  
Projected Range ◽  
Out Of Plane ◽  
Good Agreement

ABSTRACTA pronounced swelling effect occurs when irradiating SiO2 quartz with heavy ions (F, S, Cu, Kr, Xe, Ta, and Pb) in the electronic energy loss regime. Using a profilometer, the out-of-plane swelling was measured by scanning over the border line between an irradiated and a virgin area of the sample surface. The step height varied between 20 and 300 nm depending on the fluence, the electronic energy loss and the total range of the ions. From complementary Rutherford backscattering experiments under channelling condition (RBS-C), the damage fraction and corresponding track radii were extracted. Normalising the step height per incoming ion and by the projected range, a critical energy loss of 1.8 ± 0.5 keV/nm was found which is in good agreement with the threshold observed by RBS-C. Swelling can be explained by the amorphisation induced along the ion trajectories. The experimental results in quartz are compared to swelling data obtained under similar irradiation conditions in LiNbO3

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