Low-temperature sintering of ferroelectric Pb(Zr, Ti)O3 thick films derived from stable sol-gel solutions

2001 ◽  
Vol 41 (1-4) ◽  
pp. 167-174 ◽  
Author(s):  
Kazunari Maki ◽  
Nobuyuki Soyama ◽  
Kaoru Nagamine ◽  
Satoru Mori ◽  
Katsumi Ogi
Keyword(s):  
Low Temperature ◽  
Thick Films ◽  
Sol Gel ◽  
Low Temperature Sintering

Low Temperature Sintering and Tunable Dielectrics Properties of Thick Films added of Li2CO3on BST

2006 ◽  
Vol 16 (12) ◽  
pp. 747-753
Author(s):  
So-Hyun Jeon ◽  
In-Sung Kim ◽  
Sun-Jong Jung ◽  
Jae-Sung Song ◽  
Jon-Do Yoon
Keyword(s):  
Low Temperature ◽  
Thick Films ◽  
Low Temperature Sintering ◽  
Tunable Dielectrics

Low temperature sintering of screen-printed Pb(ZrTi)O3 thick films

2000 ◽  
Vol 30 (1-4) ◽  
pp. 91-101 ◽  
Author(s):  
Yongbae Jeon ◽  
Yong Gyo Seo ◽  
Seong-jin Kim ◽  
Kwangsoo No
Keyword(s):  
Low Temperature ◽  
Thick Films ◽  
Low Temperature Sintering ◽  
Screen Printed

Low-Temperature Sintering and Microwave Dielectric Properties of the Zn2SiO4 Ceramics

2009 ◽  
Vol 66 ◽  
pp. 104-107 ◽  
Author(s):  
Ying Dai ◽  
Yao Sun ◽  
Wen Chen
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Microwave Dielectric Properties ◽  
Low Temperature Sintering ◽  
Sintering Aid ◽  
Microwave Dielectric ◽  
Low Sintering Temperature

Willemite ceramics (Zn2SiO4) possess excellent millimeter-wave dielectric properties, but it also has a high sintering temperature above 1300°C by traditional solid-state reaction and relatively large negative τf value. Zn2SiO4 nanoparticles synthesized by Sol–Gel method were used to improve the sintering and dielectric properties of the Zn2SiO4 ceramics. Using the nanoparticles, Zn2SiO4 ceramics can be sintered at a low temperature, 1150°C and exhibited improved microwave dielectric properties of εr =6.62, Q × f=24500 GHz, τf =-59ppm/°C. By adding TiO2 with high positive τf value (+450 ppm/°C) and CuO as sintering aid, near zero τf value and low sintering temperature can be achieved. With 11wt% of TiO2 and 5 wt% of CuO, an εr value of 9.3, a Q × f value of 12200GHz and a τf value of -11 ppm/°C were obtained at 1000°C, confirming the promising potential of the CuO-added TiO2-Zn2SiO4 ceramics as candidate materials for low–temperature cofired ceramic (LTCC) devices.

Low Temperature Sintering and Microwave Dielectric Properties of Ba4Nd9.33Ti18O54 Ceramics Doped with Crystallizable Glass

2011 ◽  
Vol 412 ◽  
pp. 280-284
Author(s):  
Ru Zhong Zuo ◽  
Yang Lv ◽  
Yang Wu ◽  
Zhen Xing Yue
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Grain Growth ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Microwave Dielectric Properties ◽  
Air Bubbles ◽  
Low Temperature Sintering ◽  
Porous Structures ◽  
Microwave Dielectric

The effect of CaO-B2O3-SiO2 glass on the densification, microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics was investigated in this work. It was found that the addition of a few amount of glass (≤2%) could effectively decrease the sintering temperature owing to the viscous sintering. However, locally porous structures were formed when overmuch glass was added because of enwrapped air bubbles and rapid grain growth. In addition, the amount of remaining glass after sintering could be decreased due to the re-crystallization of CaO-B2O3-SiO2 glass. Sol-gel derived Ba4Nd9.33Ti18O54 ceramics containing 2 wt% glass can be well densified at 950°C and exhibit good microwave dielectric properties of εr=68 and Q×f=7400 GHz.

Sign in / Sign up

Export Citation Format

Share Document