The Characteristics of Magnesium Titanate Thin Film as Buffer Layer by Electron Beam Evaporation

2003 ◽  
Vol 57 (1) ◽  
pp. 1265-1270 ◽  
Author(s):  
Choon-Ho Lee ◽  
Sun-Il Kim
1989 ◽  
Vol 136 (9) ◽  
pp. 2736-2740 ◽  
Author(s):  
Ken‐ichi Onisawa ◽  
Kazuo Taguchi ◽  
Moriaki Fuyama ◽  
Katsumi Tamura ◽  
Yoshio Abe ◽  
...  

2003 ◽  
Vol 34 (1) ◽  
pp. 563 ◽  
Author(s):  
Kwang Ho Kim ◽  
Hoon Kim ◽  
Hong Mo Koo ◽  
Jai Kyeong Kim ◽  
Young Chul Kim ◽  
...  

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.


2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.


2000 ◽  
Vol 43 (9) ◽  
pp. 847-852 ◽  
Author(s):  
Hae Yong Noh ◽  
Kyu Hwan Lee ◽  
Xiang Xu Cui ◽  
Chong-Sool Choi

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