Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Single Phase ◽  
Physical Property ◽  
Electron Beam Evaporation ◽  
V2o5 Thin Films ◽  
Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

Microstructures of The Electron-Beam Evaporated InSb Thin Films

1988 ◽  
Vol 135 ◽  
Author(s):  
D.J. Cheng ◽  
S. Yeh ◽  
G.F. Chi
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Second Phase ◽  
Si Substrate ◽  
Cross Sectional ◽  
N2 Atmosphere ◽  
Heat Treated ◽  
Insb Thin Films ◽  
Diffraction Patterns

AbstractPolycrystalline InSb thin films have been prepared by the two-source electron-beam evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown thin films have been heat treated under N2 atmosphere which is slightly mixed with air. A thin InOx layer is formed on the top surface of the thin film.After heat treatment, the InSb films grown on the oxidized Si substrate shows a preferred (111) orientation. While the films grown on Si substrate do not show such preferred orientation as evidenced by the X-ray diffraction patterns.The TEM cross sectional morphologies of the InSb film grown on oxidized Si substrate shows an ordered arrangement of the grains. While the film grown on the pure Si substrate shows a random arrangement of the grains. The film grown on the oxidized Si substrate also shows the existence of the twin boundary and an ordered arrangement of the precipitation of the second phase.

Study Of The Growth Mechanisms of NbS2 Scales Using Marker Experiments

1991 ◽  
Vol 222 ◽  
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Growth Mechanisms ◽  
Depth Profiles ◽  
Scanning Auger Microscopy ◽  
Dominant Process ◽  
Au Thin Films ◽  
Auger Microscopy

ABSTRACTABSTRACT Au thin films were deposited using electron beam evaporation onto the surface of Nb metal to serve as thin film markers to study the growth mechanisms of NbS2 scales. Scanning Auger microscopy (SAM) was used to measure the depth profiles for the compositions of Au, Nb, S, Si and O across the sulfide scale. Three other marker experiments were also studied. All four marker experiments indicated that the inward diffusion of sulfur is the dominant process responsible for the growth of NbS2 scales.

Study of the optical properties of SiO2, and Al2O3 films deposited by electron beam technique

2015 ◽  
Vol 9 (3) ◽  
pp. 2453-2460 ◽  
Author(s):  
Reza Shakouri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
The Other ◽  
Sio2 Thin Film ◽  
Al2o3 Films ◽  
Beam Technique ◽  
Al2o3 Thin Film

Al2O3 and SiO2 thin films have been prepared by electron beam evaporation at different oxygen flows. The influences of oxygen partial pressure on optical properties of Al2O3and SiO2 thin films have been studied. We have coated Al2O3and SiO2 without some oxygen background in the chamber. The results show that Al2O3 thin film does not have absorption even though it is coated without oxygen background in the chamber. On the other hand, without oxygen flow, SiO2 thin film has some absorption.  The packing density of the samples is studied by change in the spectrum of a coating with humidity

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