Structural Properties of SrTiO3 Transparent Thin Films Formed by RF Magnetron Sputtering with Changing Substrate Temperatures

2013 ◽  
Vol 534 ◽  
pp. 40-45
Author(s):  
Kenji Kakiage ◽  
Shiho Ishiuchi ◽  
Toru Kyomen ◽  
Minoru Hanaya
Keyword(s):  
Thin Films ◽  
Particle Size ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Lattice Constant ◽  
Strontium Titanate ◽  
Glass Plate ◽  
Rf Magnetron Sputtering ◽  
Transparent Film ◽  
Substrate Temperatures

Transparent thin films of strontium titanate (SrTiO3) were formed on the substrate of quartz glass plate by RF magnetron sputtering with changing the substrate temperatures during the sputtering from 100 to 700 °C. The particle size and the lattice constant of the cubic-SrTiO3 crystallites composing the film were exhibited to be changed from 13 to 48 nm and from 4.02 to 3.96 Å, respectively, by the change of the substrate temperatures from 400 to 700 °C. The UV absorption edges of the transparent film samples shifted to longer wavelength with the increase of the particle size and the decrease of the lattice constant of the nanocrystalline SrTiO3.

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

2014 ◽  
Vol 989-994 ◽  
pp. 65-68
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Flexible Substrates ◽  
Average Transmittance

ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 9.2×10-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

Characteristics of SrTiO 3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures

2002 ◽  
Vol 82 (8) ◽  
pp. 891-903 ◽  
Author(s):  
Zhongchun Wang ◽  
Veronika Kugler ◽  
Ulf Helmersson ◽  
E. K. Evangelou ◽  
N. Konofaos ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Substrate Temperatures

As‐Grown Superconductivity of Bi‐System Thin Films Prepared by Magnetron Sputtering with Three Pb Doped Targets: (Bi 1.6 Pb0.4) 1 + a (SrCa)2 Cu3 O x, (Bi 1.6 Pb0.4) 1 (SrCa)2+c Cu3 Ox and (Bi 1.6 Pb0.4) 1 (SrCa)2Cu3+cOx (a = 0.5, b= 1,c= 1.5)

1989 ◽  
Vol 169 ◽  
Author(s):  
Ken'ichi Kuroda ◽  
Masami Tanioku ◽  
Kazuyoshi Kojima ◽  
Koichi Hamanaka
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Substrate Temperatures

AbstractSuperconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb. The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

Leakage Current Behaviors of Ba0.5Sr0.5TiO3 Thin Films on Pt, RuO2, and Pt/RuO2 Bottom Electrodes

1996 ◽  
Vol 433 ◽  
Author(s):  
W. Jo ◽  
D. C. Kim ◽  
H. M. Lee ◽  
K. Y. Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Leakage Current ◽  
Rf Magnetron Sputtering ◽  
Dielectric Constants ◽  
Current Characteristics

AbstractBa0.5Sr0.5TiO3 thin films were grown by rf-magnetron sputtering. Pt and RuO2 films were used as bottom electrodes of the Ba0.5Sr0.5TiO3 thin films. Further, a Pt/RuO2 hybrid electrode was adopted as an electrode for the film. Structural properties of the Ba0.5Sr0.5TiO3 thin films were found to be closely related to the type of the bottom electrodes. Dielectric constants of the films on Pt, RuO2, and Pt/RuO2 were measured as 500, 320, and 450 in the range of 100 Hz ˜ 1 MHz, respectively. Leakage current characteristics of the films were also found to be strongly dependent on the type of the electrodes and their microstructures.

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