Kinetics of the room-temperature air oxidation of hydrogenated amorphous silicon and crystalline silicon

1988 ◽  
Vol 58 (4) ◽  
pp. 385-388 ◽  
Author(s):  
Z. H. Lu ◽  
E. Sacher ◽  
A. Yelon
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Air Oxidation ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

scholarly journals High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

2011 ◽  
Vol 99 (20) ◽  
pp. 203503 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Hydrogenated Amorphous ◽  
Silicon Surface Passivation

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

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