An atomic scale characterization of coupled grain boundary motion in silicon bicrystals

Author(s):  
Stefan Bringuier ◽  
Venkateswara Rao Manga ◽  
Keith Runge ◽  
Pierre Deymier ◽  
Krishna Muralidharan
2010 ◽  
Vol 81 (13) ◽  
Author(s):  
K. J. Dudeck ◽  
N. A. Benedek ◽  
M. W. Finnis ◽  
D. J. H. Cockayne

2001 ◽  
Vol 48 (3-4) ◽  
pp. 188-193 ◽  
Author(s):  
K.L Merkle ◽  
L.J Thompson

2000 ◽  
Vol 654 ◽  
Author(s):  
R.F. Klie ◽  
N. D. Browning

AbstractWe have examined the structure, composition and bonding at an un-doped 58° [001] tilt grain-boundary in SrTiO3 in order to investigate the control that the grain boundary exerts over the bulk properties. Room temperature and in-situ heating experiments show that there is a segregation of oxygen vacancies to the grain boundary that is increased at elevated temperatures and is independent of the cation arrangement. These measurements indicate that the widely observed electronic properties of grain boundaries may be due to an excess of mobile oxygen vacancies that cause a highly doped n-type region in the close proximity ( ≍ 1 unit cell) to the boundary. These results are shown to be consistent with both theoretical models and lower resolution chemical analysis.


Carbon ◽  
2015 ◽  
Vol 84 ◽  
pp. 146-150 ◽  
Author(s):  
Dongwook Kim ◽  
Youngkuk Kim ◽  
Jisoon Ihm ◽  
Euijoon Yoon ◽  
Gun-Do Lee

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono

2016 ◽  
Vol 33 (7) ◽  
pp. 419-437 ◽  
Author(s):  
Lidia E. Chinchilla ◽  
Carol Olmos ◽  
Mert Kurttepeli ◽  
Sara Bals ◽  
Gustaaf Van Tendeloo ◽  
...  

2011 ◽  
Vol 65 (2) ◽  
pp. 151-154 ◽  
Author(s):  
M. Velasco ◽  
H. Van Swygenhoven ◽  
C. Brandl

2004 ◽  
Vol 10 (S02) ◽  
pp. 452-453
Author(s):  
Hakim Iddir ◽  
Mark Disko ◽  
Nigel D. Browning ◽  
Serdar Ogut

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


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