Topological and atomic scale characterization of grain boundary networks in polycrystalline and nanocrystalline materials

2011 ◽  
Vol 56 (6) ◽  
pp. 864-899 ◽  
Author(s):  
Mo Li ◽  
Tao Xu
Keyword(s):  
Grain Boundary ◽  
Nanocrystalline Materials ◽  
Atomic Scale ◽  
Scale Characterization

Atomic-scale characterization of theSrTiO3Σ3(112)[1¯10]grain boundary

2010 ◽  
Vol 81 (13) ◽  
Author(s):  
K. J. Dudeck ◽  
N. A. Benedek ◽  
M. W. Finnis ◽  
D. J. H. Cockayne
Keyword(s):  
Grain Boundary ◽  
Atomic Scale ◽  
Scale Characterization

Atomic Scale Characterization of Oxygen Vacancy Segregation at SrTiO3 Grain Boundaries

2000 ◽  
Vol 654 ◽  
Author(s):  
R.F. Klie ◽  
N. D. Browning
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Oxygen Vacancies ◽  
Elevated Temperatures ◽  
Theoretical Models ◽  
Atomic Scale ◽  
Close Proximity ◽  
Scale Characterization

AbstractWe have examined the structure, composition and bonding at an un-doped 58° [001] tilt grain-boundary in SrTiO3 in order to investigate the control that the grain boundary exerts over the bulk properties. Room temperature and in-situ heating experiments show that there is a segregation of oxygen vacancies to the grain boundary that is increased at elevated temperatures and is independent of the cation arrangement. These measurements indicate that the widely observed electronic properties of grain boundaries may be due to an excess of mobile oxygen vacancies that cause a highly doped n-type region in the close proximity ( ≍ 1 unit cell) to the boundary. These results are shown to be consistent with both theoretical models and lower resolution chemical analysis.

An atomic scale characterization of coupled grain boundary motion in silicon bicrystals

2015 ◽  
Vol 95 (36) ◽  
pp. 4118-4129 ◽  
Author(s):  
Stefan Bringuier ◽  
Venkateswara Rao Manga ◽  
Keith Runge ◽  
Pierre Deymier ◽  
Krishna Muralidharan
Keyword(s):  
Grain Boundary ◽  
Atomic Scale ◽  
Boundary Motion ◽  
Scale Characterization ◽  
Grain Boundary Motion

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization

scholarly journals Combined Macroscopic, Nanoscopic, and Atomic-Scale Characterization of Gold-Ruthenium Bimetallic Catalysts for Octanol Oxidation

2016 ◽  
Vol 33 (7) ◽  
pp. 419-437 ◽  
Author(s):  
Lidia E. Chinchilla ◽  
Carol Olmos ◽  
Mert Kurttepeli ◽  
Sara Bals ◽  
Gustaaf Van Tendeloo ◽  
...  
Keyword(s):  
Bimetallic Catalysts ◽  
Atomic Scale ◽  
Scale Characterization

Atomic scale characterization of interfacial water near an oxide surface using molecular dynamics simulations

2012 ◽  
Vol 14 (44) ◽  
pp. 15593 ◽  
Author(s):  
Sanket A. Deshmukh ◽  
Subramanian K. R. S. Sankaranarayanan
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Atomic Scale ◽  
Oxide Surface ◽  
Interfacial Water ◽  
Scale Characterization ◽  
Dynamics Simulations

Atomic Scale Characterization of the Pt/TiO2; Interface

2004 ◽  
Vol 10 (S02) ◽  
pp. 452-453
Author(s):  
Hakim Iddir ◽  
Mark Disko ◽  
Nigel D. Browning ◽  
Serdar Ogut
Keyword(s):  
Atomic Scale ◽  
Scale Characterization

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Atomic-scale characterization of the interfacial phonon in graphene/SiC

2017 ◽  
Vol 96 (15) ◽  
Author(s):  
Emi Minamitani ◽  
Ryuichi Arafune ◽  
Thomas Frederiksen ◽  
Tetsuya Suzuki ◽  
Syed Mohammad Fakruddin Shahed ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Scale Characterization

scholarly journals Hardware and Techniques for Cross- Correlative TEM and Atom Probe Analysis

2008 ◽  
Vol 16 (4) ◽  
pp. 42-47 ◽  
Author(s):  
Brian P. Gorman ◽  
David Diercks ◽  
Norman Salmon ◽  
Eric Stach ◽  
Gonzalo Amador ◽  
...  
Keyword(s):  
A Priori ◽  
Atom Probe ◽  
Atomic Scale ◽  
Original Position ◽  
3 Dimensional ◽  
Original Specimen ◽  
High Electrical Field ◽  
Scale Characterization ◽  
Surface Monolayers

Atom probe tomography has primarily been used for atomic scale characterization of high electrical conductivity materials. A high electrical field applied to needle-shaped specimens evaporates surface atoms, and a time of flight measurement determines each atom's identity. A 2-dimensional detector determines each atom's original position on the specimen. When repeated successively over many surface monolayers, the original specimen can be reconstructed into a 3-dimensional representation. In order to have an accurate 3-D reconstruction of the original, the field required for atomic evaporation must be known a-priori. For many metallic materials, this evaporation field is well characterized, and 3-D reconstructions can be achieved with reasonable accuracy.

scholarly journals Atomic Scale Characterization of Oxygen Vacancy Dynamics by In -Situ Reduction and Analytical Atomic Resolution STEM

2002 ◽  
Vol 8 (S02) ◽  
pp. 1396-1397 ◽  
Author(s):  
R.F. Klie ◽  
N. D. Browning ◽  
Y. Zhu
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Scale ◽  
Atomic Resolution ◽  
In Situ Reduction ◽  
Scale Characterization
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