Mobilities of charge carriers generated by corona discharge in low temperature helium gas

1991 ◽  
Vol 24 (8) ◽  
pp. 1360-1366 ◽  
Author(s):  
J Suehiro ◽  
K Yamamoto ◽  
M Hara
Keyword(s):  
Low Temperature ◽  
Corona Discharge ◽  
Charge Carriers ◽  
Helium Gas

Aqueous Benzene Oxidation in Low-Temperature Plasma of Pulsed Corona Discharge

2016 ◽  
Vol 19 (2) ◽  
Author(s):  
Iakov Kornev ◽  
Sergei Preis
Keyword(s):  
Low Temperature ◽  
Corona Discharge ◽  
Gas Phase ◽  
Pulse Repetition Frequency ◽  
Repetition Frequency ◽  
Pulse Repetition ◽  
Benzene Oxidation ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Pulsed Corona

AbstractWastewaters polluted with non-biodegradable volatile organic compounds (VOCs), such as aromatic substances, present a growing problem meeting no adequately affordable technological response. Low-temperature plasma generated in the gas-phase pulsed corona discharge (PCD) presents competitive advanced oxidation technology in abatement of various classes of pollutants, although the process parameters, the pulse repetition frequency and the liquid spray rate, require optimization. The experimental research into aqueous benzene oxidation with PCD was undertaken to establish the impact of the parameters to the energy efficiency. The oxidation reaction was found under the experimental conditions to mostly proceed in the gas phase showing little influence of the pulse repetition frequency and the gas-liquid contact surface. Oxidation of benzene and, presumably, other volatile pollutants in the volume of PCD reactor compartment presents an effective strategy of aqueous VOCs abatement.

scholarly journals Performance of a MFS-based mosfet for low temperature applications

2005 ◽  
Vol 3 (01) ◽  
Author(s):  
P.J. Garcí­a-Ramí­rez ◽  
F. Sandoval-Ibarra
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Power Consumption ◽  
Wide Temperature Range ◽  
Carrier Mobility ◽  
Charge Carriers ◽  
Low Power Consumption ◽  
Current Line ◽  
Key Parameter ◽  
Very Low Temperature

A split-drain MAGFET has been designed for detecting magnetic fields at very low temperature. In this design a key parameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the charge carriers. It is well known that reducing the work temperature the carrier mobility increases, therefore an increase in carrier deflection is expected. As a consequence the split-drain MAGFET is able to detect magnetic fields below 1mT at 77K with low power consumption. Experimental results of a wide temperature range (20K< T

scholarly journals The role of spin–orbit effects in the mobility of N+ ions moving in a helium gas at low temperature

2020 ◽  
Vol 74 (7) ◽  
Author(s):  
Lamia Aïssaoui ◽  
Peter J. Knowles ◽  
Moncef Bouledroua
Keyword(s):  
Low Temperature ◽  
Cross Sections ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Temperature Model ◽  
Helium Gas ◽  
Spin Orbit Interactions ◽  
High Level

Abstract The mobility of N+ ions in ground-state helium gas at very low temperature is examined with explicit inclusion of spin–orbit coupling effects. The ionic kinetics is treated theoretically with the three-temperature model. The N+–He interaction potentials, including spin–orbit coupling, are determined using high-level ab initio calculations. Then, the classical and quantal transport cross sections, both needed in the computation of the mobility coefficients, are calculated in terms of the collisional energy of the N+–He system. The numerical results, at temperature 4.3 K, show the spin–orbit interactions have negligible effect on the mobility coefficients. Graphical abstract

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

Magnetic low-temperature specific heat of YBa2Cu3O7−δ due to localized charge carriers

1992 ◽  
Vol 204 (1-2) ◽  
pp. 161-170 ◽  
Author(s):  
Th. Schreiner ◽  
R. Ahrens ◽  
T. Wolf ◽  
H. Schmidt ◽  
H. Rietschel
Keyword(s):  
Low Temperature ◽  
Specific Heat ◽  
Charge Carriers ◽  
Low Temperature Specific Heat
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