Purified water etching of native oxides on heteroepitaxial CdTe thin films

2014 ◽  
Vol 47 (49) ◽  
pp. 495304 ◽  
Author(s):  
Kristoffer Meinander ◽  
Jessica L Carvalho ◽  
Carley Miki ◽  
Joshua Rideout ◽  
Stephen M Jovanovic ◽  
...  
2017 ◽  
Vol 9 (5) ◽  
pp. 05016-1-05016-5 ◽  
Author(s):  
Y. P. Saliy ◽  
◽  
L. I. Nykyruy ◽  
R. S. Yavorskyi ◽  
S. Adamiak ◽  
...  

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


2021 ◽  
pp. 130552
Author(s):  
M.N. Harif ◽  
K.S. Rahman ◽  
C. Doroody ◽  
H.N. Rosly ◽  
M. Isah ◽  
...  

1995 ◽  
Vol 10 (1) ◽  
pp. 71-76 ◽  
Author(s):  
B Ghosh ◽  
S Purakayastha ◽  
P K Datta ◽  
R W Miles ◽  
M J Carter ◽  
...  

2012 ◽  
Vol 42 (3) ◽  
pp. 389-397
Author(s):  
V. Srivastav ◽  
R. Pal ◽  
N. Saini ◽  
R. S. Saxena ◽  
R. K. Bhan ◽  
...  

1996 ◽  
Vol 225-227 ◽  
pp. 169-174 ◽  
Author(s):  
D.L. Schulz ◽  
M. Pehnt ◽  
C.J. Curtis ◽  
D.S. Ginley

2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  

2008 ◽  
Author(s):  
Ajit Mahadkar ◽  
Alka Chauhan ◽  
Madhavi Thakurdesai ◽  
Deepak Gaikwad ◽  
P. Predeep ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
A. Gonzalez-Cisneros ◽  
F. L. Castillo-Alvarado ◽  
J. Ortiz-Lopez ◽  
G. Contreras-Puente

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compoundCdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimentalC-V(capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.


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