Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process

2015 ◽  
Vol 48 (48) ◽  
pp. 485302 ◽  
Author(s):  
Peng Zhang ◽  
Ting Huang ◽  
Qinghu You ◽  
Jinzhong Zhang ◽  
Wenwu Li ◽  
...  
2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  

2018 ◽  
Vol 6 (2) ◽  
pp. 026409
Author(s):  
Yunfeng Guo ◽  
Yuzhi Zhang ◽  
Liangmiao Zhang ◽  
Xinrui Lv ◽  
Lingnan Wu ◽  
...  

2018 ◽  
Vol 2 (10) ◽  
pp. 2224-2236 ◽  
Author(s):  
Wai Ling Kwong ◽  
Pramod Koshy ◽  
Judy N. Hart ◽  
Wanqiang Xu ◽  
Charles C. Sorrell

Decoupled effects of crystallographic {002} orientation and oxygen vacancies on the electronic band structure of monoclinic WO3 films.


Author(s):  
Hua Li ◽  
Gang Li

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.


2019 ◽  
Vol 123 (40) ◽  
pp. 24890-24898 ◽  
Author(s):  
Andrew J. Yost ◽  
Thilini K. Ekanayaka ◽  
Gautam Gurung ◽  
Gaurab Rimal ◽  
Sabit Horoz ◽  
...  

2011 ◽  
Vol 110 (10) ◽  
pp. 103503 ◽  
Author(s):  
Jun-Woo Park ◽  
Hyungkeun Jang ◽  
Sung Kim ◽  
Suk-Ho Choi ◽  
Hosun Lee ◽  
...  

2005 ◽  
Vol 98 (9) ◽  
pp. 094108 ◽  
Author(s):  
Hosun Lee ◽  
Youn Seon Kang ◽  
Sang-Jun Cho ◽  
Bo Xiao ◽  
Hadis Morkoç ◽  
...  

2011 ◽  
Vol 12 (1) ◽  
pp. 195-201 ◽  
Author(s):  
R. Matsubara ◽  
M. Sakai ◽  
K. Kudo ◽  
N. Yoshimoto ◽  
I. Hirosawa ◽  
...  

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