Silicon-based structures for IR light emission

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

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Photovoltaic and Electroluminescent Properties of Stainetched Porous Silicon Based Heterojunctions

MRS Proceedings ◽

10.1557/proc-405-167 ◽

1995 ◽

Vol 405 ◽

Cited By ~ 2

Author(s):

D. Dimova-Malinovska ◽

M. Tzolov ◽

M. Kamenova ◽

N. Tzenov ◽

M. Sendova-Vassileva ◽

...

Keyword(s):

Light Emission ◽

Photovoltaic Effect ◽

Luminescent Properties ◽

Porous Si ◽

Photoelectric Properties ◽

Type C ◽

P Type ◽

Silicon Based ◽

Electrical Bias ◽

Stain Etching

AbstractThe results of photoelectric properties and electroluminescent studies of structures ZnO/porous Si/p-type c-Si/Al and ZnO/porous Si/p-n c-Si junction/Al are presented. Porous Si is prepared by stain etching of c-Si covered with thin Al film. The transparent ZnO film allows light emission through the top surface of the device under forward electrical bias. Photocurrent is observed under reverse bias and a photovoltaic effect is measured on the p-n junction PS device. The model based on injection of minority carriers through a narrow energy barrier into the porous Si and the presence of the barrier at the interface porous Si/c-Si is suggested for describing the electrical, photoelectric and luminescent properties of the structures.

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FIRST-PRINCIPLES CALCULATIONS OF LIGHT EMISSION FROM SILICON-BASED MATERIALS

Porous Silicon ◽

10.1142/9789812812995_0016 ◽

1994 ◽

pp. 329-344

Author(s):

CHRIS G. VAN DE WALLE ◽

JOHN E. NORTHRUP

Keyword(s):

First Principles ◽

Light Emission ◽

First Principles Calculations ◽

Silicon Based

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Light emission from silicon-based porous anodic alumina formed in 0.5 M oxalic acid

Journal of Applied Physics ◽

10.1063/1.1595727 ◽

2003 ◽

Vol 94 (4) ◽

pp. 2407-2410 ◽

Cited By ~ 17

Author(s):

G. S. Huang ◽

X. L. Wu ◽

Y. Xie ◽

X. F. Shao ◽

S. H. Wang

Keyword(s):

Oxalic Acid ◽

Light Emission ◽

Anodic Alumina ◽

Porous Anodic Alumina ◽

Silicon Based

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Silicon based IR light emitters

physica status solidi (c) ◽

10.1002/pssc.200880713 ◽

2009 ◽

Vol 6 (3) ◽

pp. 707-715 ◽

Cited By ~ 5

Author(s):

Martin Kittler ◽

Teimuraz Mchedlidze ◽

Tzanimir Arguirov ◽

Winfried Seifert ◽

Manfred Reiche ◽

...

Keyword(s):

Light Emitters ◽

Silicon Based ◽

Ir Light

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Radiative recombination processes of thermal donors in silicon

MRS Proceedings ◽

10.1557/proc-692-h6.30.1 ◽

2001 ◽

Vol 692 ◽

Cited By ~ 5

Author(s):

S. Pizzini ◽

S. Binetti ◽

E. Leoni ◽

A. Le Donne ◽

M. Acciarri ◽

...

Keyword(s):

Room Temperature ◽

Light Emission ◽

Deep Level ◽

Line Emission ◽

Shallow Donor ◽

Light Emitting ◽

Microelectronic Technology ◽

Recombination Processes ◽

Transient Spectroscopy ◽

Silicon Based

AbstractThere is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples.We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at EV+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

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