Photovoltaic and Electroluminescent Properties of Stainetched Porous Silicon Based Heterojunctions

AbstractThe results of photoelectric properties and electroluminescent studies of structures ZnO/porous Si/p-type c-Si/Al and ZnO/porous Si/p-n c-Si junction/Al are presented. Porous Si is prepared by stain etching of c-Si covered with thin Al film. The transparent ZnO film allows light emission through the top surface of the device under forward electrical bias. Photocurrent is observed under reverse bias and a photovoltaic effect is measured on the p-n junction PS device. The model based on injection of minority carriers through a narrow energy barrier into the porous Si and the presence of the barrier at the interface porous Si/c-Si is suggested for describing the electrical, photoelectric and luminescent properties of the structures.

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Photovoltaic Characterization of Trapping in Porous Silicon

MRS Proceedings ◽

10.1557/proc-358-587 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 1

Author(s):

D. W. Boeringer ◽

R. Tsu

Keyword(s):

Porous Silicon ◽

Photovoltaic Effect ◽

Light Spot ◽

Dangling Bond ◽

Photogenerated Electrons ◽

Device Applications ◽

Photovoltaic Characterization ◽

P Type ◽

Silicon Based ◽

Position Sensitive Detectors

ABSTRACTWe report the first observation of the lateral photovoltaic effect in porous silicon. Contacts placed on either side of a porous silicon region develop a voltage up to several millivolts if the sample is asymmetrically illuminated. If the light spot is closer to one contact, the voltage will have one polarity; if it is closer to the other contact, the polarity will be opposite. In the case of n-type, the contact nearest the light spot is positive; for p-type, the contact nearest the light spot is negative In the region between the contacts, the photovoltage varies almost linearly with the position of the light spot, over a distance 4.5 cm across. The origin of our lateral photoeffect may be explained by the trapping of photoexcited carriers by a pair of dangling bond centers in porous silicon. In the case of p-type, the photogenerated electrons are trapped by the dangling bond states while holes diffuse away in the substrate. The situation for n-type is opposite; holes are trapped by the dangling bond states while electrons diffuse away in the substrate. This differs from the conventional lateral photoeffect, which arises under the nonuniform illumination of a junction between two layers of differing conductivities. Hamamatsu sells silicon-based position-sensitive detectors with a resolution down to 0.1 µm. The possibility of using this lateral photoeffect to characterize these dangling bond states in porous silicon as well as several possible device applications will be discussed.

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Photovoltaic Effect in a-Si/c-Si Heterostructure Prepared by RF Magnetron Sputtering Technique

MRS Proceedings ◽

10.1557/proc-426-65 ◽

1996 ◽

Vol 426 ◽

Author(s):

B. G. Budaguan ◽

A. A. Sherchenkov ◽

A. A. Aivazov

Keyword(s):

Photovoltaic Effect ◽

Energy Band Diagram ◽

Rf Magnetron Sputtering ◽

Band Diagram ◽

Ir Detector ◽

Interfacial Condition ◽

Annealing Conditions ◽

Type C ◽

Amorphous Si ◽

P Type

AbstractPhotosensitivity spectral dependencies of the a-Si(n-type)/c-Si(p-type) heterostructure for the different reverse biases, Vb, amorphous Si film thickness, substrate predeposition temperatures, Ts, and annealing conditions, Ta, were investigated in the wavelengths range of 500–1200 nm It was found that the position of the relative photosensitivity maximum depends on Ts, and Vb and can be varied in the wavelengths range of 840–1080 nm. The energy band diagram of the heterostructure was analyzed to explain the observed results. It was shown that the photosensitivity properties of the a-Si/c-Si heterostructure depend on the interfacial condition. The perspective application of the structures investigated is IR detector fabrication.

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Metastability of Luminescent Porous Silicon

MRS Proceedings ◽

10.1557/proc-283-299 ◽

1992 ◽

Vol 283 ◽

Cited By ~ 1

Author(s):

S. Mtyazaki ◽

K. Sakamoto ◽

K. Shiba ◽

M. Hirose

Keyword(s):

Porous Silicon ◽

Luminescence Intensity ◽

Chemical Etching ◽

Anomalous Temperature Dependence ◽

Porous Si ◽

Anomalous Temperature ◽

Type C ◽

P Type ◽

Quenching Phenomenon ◽

Subsequent Chemical

ABSTRACTPhotoluminescence from l–3μm thick porous Si layers prepared by anodization of p-type c-Si wafers and subsequent chemical etching exhibits an anomalous temperature dependence and light-induced degradation. The luminescence intensity is almost quenched at temperatures below 30K and recovered by laser irradiation at 48K. This quenching phenomenon is not observed for PS thicker than 10μm. The luminescence fatigue is partially recovered by annealing at 150°C for 5min during which no further oxidation takes place. These observations are interpreted in terms of the structural metastability of hydrogen-terminated porous Si.

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InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

Microelectronic Engineering ◽

10.1016/j.mee.2021.111514 ◽

2021 ◽

Vol 238 ◽

pp. 111514

Author(s):

Sergii Golovynskyi ◽

Oleksandr I. Datsenko ◽

Luca Seravalli ◽

Giovanna Trevisi ◽

Paola Frigeri ◽

...

Keyword(s):

Quantum Dots ◽

Room Temperature ◽

Light Emission ◽

Deep Levels ◽

Photoelectric Properties

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SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.153 ◽

2007 ◽

Vol 556-557 ◽

pp. 153-156

Author(s):

Chi Kwon Park ◽

Gi Sub Lee ◽

Ju Young Lee ◽

Myung Ok Kyun ◽

Won Jae Lee ◽

...

Keyword(s):

Electrical Properties ◽

Epitaxial Layer ◽

Light Emission ◽

Epitaxial Layers ◽

Current Voltage ◽

Space Technique ◽

Sublimation Method ◽

Device Applications ◽

P Type ◽

Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

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Rare Earth Ion Implantation for Silicon Based Light Emission

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.755 ◽

2005 ◽

Vol 108-109 ◽

pp. 755-760 ◽

Cited By ~ 7

Author(s):

Wolfgang Skorupa ◽

J.M. Sun ◽

S. Prucnal ◽

L. Rebohle ◽

T. Gebel ◽

...

Keyword(s):

Rare Earth ◽

Ion Implantation ◽

Indium Tin Oxide ◽

Light Emission ◽

Charge Trapping ◽

Electrical Performance ◽

Rare Earth Ion ◽

Light Emitting ◽

Silicon Based ◽

Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

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Single nanoparticle of organic p-type and n-type hybrid materials: nanoscale phase separation and photovoltaic effect

Journal of Materials Chemistry ◽

10.1039/c1jm13952e ◽

2012 ◽

Vol 22 (6) ◽

pp. 2485-2490 ◽

Cited By ~ 11

Author(s):

Yong-baek Lee ◽

Seok Ho Lee ◽

Kihyun Kim ◽

Jin Woo Lee ◽

Kyung-Yeon Han ◽

...

Keyword(s):

Phase Separation ◽

Hybrid Materials ◽

Photovoltaic Effect ◽

Organic P ◽

Nanoscale Phase Separation ◽

Single Nanoparticle ◽

P Type

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Infrared Oscillators in Conventional Carbon Nanotube FET Technology

Journal of Circuits System and Computers ◽

10.1142/s021812661550053x ◽

2015 ◽

Vol 24 (04) ◽

pp. 1550053

Author(s):

Lobna I'msaddak ◽

Dalenda Ben Issa ◽

Abdennaceur Kachouri ◽

Mounir Samet ◽

Hekmet Samet

Keyword(s):

Power Consumption ◽

Response Time ◽

Oscillation Frequency ◽

Ring Oscillator ◽

Propagation Time ◽

Type C ◽

P Type ◽

Lc Tank ◽

The Impact ◽

Carbon Nanotube Fet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).

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Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.584.290 ◽

2012 ◽

Vol 584 ◽

pp. 290-294 ◽

Cited By ~ 1

Author(s):

Jeyaprakash Pandiarajan ◽

Natarajan Jeyakumaran ◽

Natarajan Prithivikumaran

Keyword(s):

Porous Silicon ◽

Current Density ◽

Light Emission ◽

Electrochemical Etching ◽

Light Emitting Diode ◽

Radiative Transition ◽

Sem Images ◽

Optoelectronic Application ◽

Gap Opening ◽

P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

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