A high-precision high-voltage divider applied to electron beam energy measurements

2011 ◽  
Vol T144 ◽  
pp. 014063
Author(s):  
W Zhang ◽  
W Chen ◽  
M L Qiu ◽  
Y Q Fu ◽  
R Hutton ◽  
...  
2008 ◽  
Vol 79 (12) ◽  
pp. 123304 ◽  
Author(s):  
W. D. Chen ◽  
J. Xiao ◽  
Y. Shen ◽  
Y. Q. Fu ◽  
F. C. Meng ◽  
...  

2009 ◽  
Vol 17 (4) ◽  
pp. 40-49 ◽  
Author(s):  
D. Phifer ◽  
L. Tuma ◽  
T. Vystavel ◽  
P. Wandrol ◽  
R.J. Young

Beam Deceleration is a relatively simple method to reduce electron beam energy and improve imaging parameters such as resolution and contrast. The scanning electron microscope (SEM) uses a sharply focused electron beam to probe the specimen surface. The energy of the electrons forming such a probe is determined by the electrical potential of the electron source, referred to as accelerating voltage or high voltage (HV). No matter how many times the electrons are accelerated or decelerated inside the column, they leave the column with an energy corresponding to the high voltage. The high voltage is usually controllable within a range of 200 V to 30 kV for most commercially available SEMs, allowing the operator to select the electron beam energy suitable for the application. Imaging with very low electron beam energy has great importance, which is illustrated by SEM instrumentation development over the last few decades [1–2]. Low voltage microscopy is a topic discussed at most microscopy-related conferences these days, but generally, it is approached with an immersion lens and field emission gun (FEG) SEM system because of the better beam current densities. However, beam deceleration is also a means to bring low kV improvement to SEMs with thermionic electron sources.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-777-C7-778
Author(s):  
G. Fournier ◽  
J. Bonnet ◽  
J. Bridet ◽  
J. Fort ◽  
D. Pigache

2020 ◽  
Vol 62 (5) ◽  
pp. 055004 ◽  
Author(s):  
Guangyu Li ◽  
Quratul Ain ◽  
Song Li ◽  
Muhammad Saeed ◽  
Daniel Papp ◽  
...  

2001 ◽  
Vol 79 (2-3) ◽  
pp. 153-162 ◽  
Author(s):  
E Träbert ◽  
P Beiersdorfer ◽  
K B Fournier ◽  
S B Utter ◽  
K L Wong

Systematic variation of the electron-beam energy in an electron-beam ion trap has been employed to produce soft-X-ray spectra (20 to 60 Å) of Au with well-defined maximum charge states ranging from Br- to Co-like ions. Guided by large-scale relativistic atomic structure calculations, the strongest Δn = 0 (n = 4 to n' = 4) transitions in Rb- to Cu-like ions (Au42+ – Au50+) have been identified. PACS Nos.: 32.30Rj, 39.30+w, 31.50+w, 32.20R


Nature ◽  
2021 ◽  
Vol 599 (7886) ◽  
pp. 565-570
Author(s):  
M. Khachatryan ◽  
A. Papadopoulou ◽  
A. Ashkenazi ◽  
F. Hauenstein ◽  
A. Nambrath ◽  
...  

Vacuum ◽  
1988 ◽  
Vol 38 (11) ◽  
pp. 1041-1043 ◽  
Author(s):  
A Balasiński ◽  
A Jakubowski ◽  
A Świt

1982 ◽  
Vol 13 ◽  
Author(s):  
D. Barbierf ◽  
M. Baghdadi ◽  
A. Laugier ◽  
A. Cachard

ABSTRACTIn this work Pulsed Electron Beam Annealing has been used to Sctivaye As implanted in (100) and (111) silicon (140 keV- 1015 cm−2 ). With a selected electron beam energy deposition profile excellent regrowth layer quality and As activation has been obtained in the 1.2–1.4 J/cm2 fluence range. As redistribution is conistent with the melting model assuming a diffusivity of 10−4 cm2/s in liquid silicon. As losses might slightly reduce the carrier concentration near the surface in the case of (100) silicon. However a shallow and highly active N+ layer have been achieved with optimized PEBA conditions.


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