Highly Oriented Diamond Film Growth by Atomic Force Microscopy

1998 ◽  
Vol 15 (11) ◽  
pp. 822-824 ◽  
Author(s):  
Jian-long Li ◽  
Ge Meng ◽  
Ke-hui Wu ◽  
En-ge Wang
Keyword(s):  
Atomic Force Microscopy ◽  
Diamond Film ◽  
Film Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diamond Film Growth

Atomic Force Microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)

2005 ◽  
Vol 202 (1) ◽  
pp. 3-3 ◽  
Author(s):  
Wei Chen ◽  
Kian Ping Loh ◽  
Ming Lin ◽  
Rong Liu ◽  
Andrew T. S. Wee
Keyword(s):  
Atomic Force Microscopy ◽  
Boron Nitride ◽  
Film Growth ◽  
Hexagonal Boron Nitride ◽  
Microscopy Study ◽  
Nitride Film ◽  
Atomic Force Microscopy Study ◽  
Force Microscopy ◽  
Atomic Force

YBCO film growth on ultrathin Ag layers

1994 ◽  
Vol 9 (11) ◽  
pp. 2761-2763 ◽  
Author(s):  
C. Zhong ◽  
S.T. Ruggiero ◽  
R. Fletcher ◽  
E. Moser
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Film Growth ◽  
Ybco Film ◽  
Critical Currents ◽  
Complete Coverage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputter Deposited ◽  
Marked Tendency

We discuss our results on the growth of YBCO thin films on ultrathin (1-10 nm) Ag underlayers. Substrates were LaAlO3. YBCO was sputter deposited and Ag thermally evaporated. It was observed that Tc remained relatively unaffected by the Ag underlayers, ranging from 86-88 K. Critical currents were found to be consistent with YBCO grown on bulk Ag when the Ag underlayer film reached complete coverage (∼9 nm). Films grown on Ag showed a marked tendency for microcrystalline growth on the basis of atomic-force microscopy (AFM) results.

Morphological Transitions in Organic Ultrathin Film Growth Imaged by In Situ Step-by-Step Atomic Force Microscopy

2020 ◽  
Vol 124 (25) ◽  
pp. 14030-14042
Author(s):  
Stefano Chiodini ◽  
Andreas Straub ◽  
Stefano Donati ◽  
Cristiano Albonetti ◽  
Francesco Borgatti ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Film Growth ◽  
Ultrathin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Morphological Transitions

An Atomic Force Microscopy and Ellipsometry Study of The Nucleation and Growth Mechanism of Polycrystalline Silicon Films on Silicon Dioxide

1998 ◽  
Vol 525 ◽  
Author(s):  
C. Basa ◽  
M. Tinani ◽  
E. A. Irene
Keyword(s):  
Atomic Force Microscopy ◽  
Real Time ◽  
Film Growth ◽  
Monitoring And Control ◽  
Force Microscopy ◽  
Atomic Force ◽  
Process Monitoring And Control ◽  
Polycrystalline Silicon Films ◽  
And Control ◽  
Critical Nuclei

ABSTRACTA study was performed using a combination of in-situ real time ellipsometry and atomic force microscopy (AFM) to follow the RTCVD process in real time and measure key nucleation parameters in an effort to elucidate the mechanism of Si nucleation on SiO2. Real time ellipsometry data, in terms of delta versus time, showed significant changes as the deposition evolves from critical nuclei through coalescence to continuous film growth thereby allowing. process monitoring and control. From the AFM images, nuclei parameters such as nuclei height, radius, and density were collected and compared across processing temperatures. It was found that kinetic factors control the growth process resulting in a transition temperature (660°C) where the size, shape, and density of the nuclei abruptly changes from small numerous nuclei to large, sparse disk-like nuclei.

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