Atomic force microscopy studies of the surface morphology of annealed single crystal substrates and substrate annealing effects on the YBa2Cu3O7-x thin film growth

2022 ◽  
pp. 205-208
Author(s):  
Y C Fan ◽  
A G Fitzgerald ◽  
H C Xu ◽  
B E Storey ◽  
A O Tooke ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Annealing Effects ◽  
Substrate Annealing

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

2016 ◽  
Vol 858 ◽  
pp. 233-236 ◽  
Author(s):  
Nadeemullah A. Mahadik ◽  
Robert E. Stahlbush ◽  
Eugene A. Imhoff ◽  
M.J. Tadjer ◽  
G.E. Ruland ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
High Temperature ◽  
Surface Morphology ◽  
Substrate Surface ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Annealing ◽  
Edge Dislocations

Basal Plane Dislocations (BPD) intersecting the SiC substrate surface were converted to threading edge dislocations (TED) by high temperature annealing of the substrates in the temperature range of 1750 °C – 1950 °C. Successively, epitaxial growth on annealed as well as non-annealed samples was performed, concurrently, to investigate the effect of the substrate annealing on BPD mitigation in the epilayers. For the 1950 °C/10min anneal, a 3x reduction in BPD density was observed. Additionally, surface roughness measured using atomic force microscopy revealed no degradation in surface morphology of the grown epilayers after annealing.

High Performance N-type Organic Thin-Film Transistors with Inert Contact Metals

2009 ◽  
Vol 1154 ◽  
Author(s):  
Sarah Schols ◽  
Lucas Van Willigenburg ◽  
Robert Müller ◽  
Dieter Bode ◽  
Maarten Debucquoy ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Deposition Fluxes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

AbstractThin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.

AFM Studies of Ni Electrodeposits on GaAs

2005 ◽  
Vol 11 (S03) ◽  
pp. 154-157 ◽  
Author(s):  
V. C. Zoldan ◽  
D. M. Kirkwood ◽  
G. Zangari ◽  
M. L. Munford ◽  
W. Figueiredo ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystal ◽  
Deposition Rate ◽  
Correlation Length ◽  
Growth Mechanism ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Crystal Gaas

In this study, the surface morphology of electrodeposited Ni on single crystal GaAs (001) was investigated by atomic force microscopy (AFM). The images show granular deposits with stepped contours typical of single-crystalline grains. The correlation length correlates very well with the size of the grains, indicating that the layers grow as columns with diameter increasing with thickness. This growth mechanism is observed for layers with thicknesses in the range of 10 to 500 nm at a deposition rate of ~0.5 nm/s.

scholarly journals Deposition and Characterization of Molybdenum Thin Film Using Direct Current Magnetron and Atomic Force Microscopy

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Muhtade Mustafa Aqil ◽  
Mohd Asyadi Azam ◽  
Mohd Faizal Aziz ◽  
Rhonira Latif
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Root Mean Square Roughness ◽  
Deposition Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Thin Film Layer ◽  
Film Layer ◽  
Grain Distribution

In this paper, pure molybdenum (Mo) thin film has been deposited on blank Si substrate by DC magnetron sputtering technique. The deposition condition for all samples has not been changed except for the deposition time in order to study the influence of time on the thickness and surface morphology of molybdenum thin film. The surface profiler has been used to measure the surface thickness. Atomic force microscopy technique was employed to investigate the roughness and grain structure of Mo thin film. The thickness and grain of molybdenum thin film layer has been found to increase with respect to time, while the surface roughness decreases. The average roughness, root mean square roughness, surface skewness, and surface kurtosis parameters are used to analyze the surface morphology of Mo thin film. Smooth surface has been observed. From grain analysis, a uniform grain distribution along the surface has been found. The obtained results allowed us to decide the optimal time to deposit molybdenum thin film layer of 20–100 nm thickness and subsequently patterned as electrodes (source/drain) in carbon nanotube-channel transistor.

Effect of ion fluence on the surface morphology of single crystal magnesium oxide implanted with xenon

1995 ◽  
Vol 10 (11) ◽  
pp. 2823-2828 ◽  
Author(s):  
Wenbiao Jiang ◽  
M. Grant Norton ◽  
David B. Poker
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystal ◽  
Magnesium Oxide ◽  
Dislocation Loop ◽  
Spherical Indenter ◽  
Surface Roughening ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oriented Single Crystal

The surface morphology (001)-oriented single-crystal magnesium oxide (MgO) implanted with xenon ions has been examined using atomic force microscopy. It was found that at the lowest fluence used in this study (1.0 × 1014/cm2), a slight roughening of the (001) surface occurred. The magnitude of this roughening remained fairly constant with increases in fluence in the range 1.0 × 1014/cm2 to 3.0 × 1016/cm2. Implantation at fluences of ≥ 1.0 × 1017/cm2 caused significant surface roughening with the concomitant formation of micron-sized blisters. The appearance of some of these blisters resembles the rosette pattern that is also observed when the cleaved surfaces of MgO crystals are etched following indentation using a spherical indenter. This observation suggests that these blisters are formed by the growth of xenon inclusions, during implantation, by a dislocation loop punching mechanism.

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force
Sign in / Sign up

Export Citation Format

Share Document