Atomic-Scale Kinetic Monte Carlo Simulation of {100} -Oriented Diamond Film Growth in C-H and C-H-Cl Systems by Chemical Vapour Deposition

2002 ◽  
Vol 19 (7) ◽  
pp. 1019-1020 ◽  
Author(s):  
An Xi-Zhong ◽  
Zhang Yu ◽  
Liu Guo-Quan ◽  
Qin Xiang-Ge ◽  
Wang Fu-Zhong ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Chemical Vapour Deposition ◽  
Diamond Film ◽  
Vapour Deposition ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Chemical Vapour ◽  
Atomic Scale ◽  
Diamond Film Growth

Diamond film growth by pulse-modulated magnetoactive microwave plasma chemical vapour deposition

1996 ◽  
Vol 281-282 ◽  
pp. 264-266 ◽  
Author(s):  
Akimitsu Hatta ◽  
Hidetoshi Suzuki ◽  
Ken-ichi Kadota ◽  
Toshimichi Ito ◽  
Akio Hiraki
Keyword(s):  
Chemical Vapour Deposition ◽  
Diamond Film ◽  
Vapour Deposition ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Plasma Chemical ◽  
Plasma Chemical Vapour Deposition ◽  
Diamond Film Growth

Monte Carlo Simulation of Electron Swarm in the Diamond Film Growth via EACVD

2003 ◽  
Vol 5 (2) ◽  
pp. 1729-1734
Author(s):  
Zhao Qing-xun ◽  
Zhang Jing ◽  
Xin Hong-li ◽  
Wen Qin-ruo ◽  
Yang Jing-fa
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Diamond Film ◽  
Film Growth ◽  
Diamond Film Growth

Simulations of CVD Diamond Film Growth Using a Simplified Monte Carlo Model

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paul William May ◽  
Jeremy N. Harvey ◽  
Neil L. Allan ◽  
James C. Richley ◽  
Yuri A. Mankelevich
Keyword(s):  
Monte Carlo ◽  
Vapour Deposition ◽  
Film Growth ◽  
Monte Carlo Model ◽  
Chemical Vapour ◽  
Cvd Diamond ◽  
Surface Migration ◽  
Average Diffusion ◽  
Cvd Diamond Film ◽  
Diamond Film Growth

AbstractA simple 1-dimensional Monte Carlo (KMC) model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The reaction probabilities for these processes are re-evaluated in detail and their effects upon the predicted growth rates and morphology are described. We find that for standard CVD diamond conditions, etching of carbon species from the growing surface is negligible. Surface migration occurs rapidly, but is mostly limited to CH2 species oscillating rapidly back and forth between two adjacent radical sites. Despite the average number of migration hops being in the thousands, the average diffusion length for a surface species is <2 sites.

Synthesis of Nano-Crystalline Diamond Film in Hot Filament Chemical Vapour Deposition by Adding Ar

2001 ◽  
Vol 18 (2) ◽  
pp. 286-288 ◽  
Author(s):  
Zhang Yu-Feng ◽  
Zhang Fan ◽  
Gao Qiao-Jun ◽  
Yu Da-Peng ◽  
Peng Xiao-Fu ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Diamond Film ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Nano Crystalline ◽  
Hot Filament
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