The Effect of the Oxygen Plasma Treatment for ITO and ZnO Nanorods on the Electroluminescence of ZnO Nanorod/MEH-PPV Heterostructure Devices

2013 ◽  
Vol 30 (3) ◽  
pp. 037802 ◽  
Author(s):  
Su-Ling Zhao ◽  
Yong-Sheng Wang ◽  
Song Gao ◽  
Yi-Fan Yang ◽  
Zheng Xu
2014 ◽  
Vol 608 ◽  
pp. 235-238 ◽  
Author(s):  
Mushtaque Hussain ◽  
Azam Khan ◽  
Omer Nur ◽  
Magnus Willander ◽  
Esteban Broitman

2021 ◽  
Vol 59 (3) ◽  
pp. 209-216
Author(s):  
Donghyuck Park ◽  
Yijun Yang ◽  
Kwanlae Kim

Zinc oxide (ZnO) simultaneously exhibits semiconducting and piezoelectric properties. ZnO in the form of nanorods has been studied intensively for application in self-powering devices. The power generation in piezoelectric nanogenerators based on ZnO nanorods can be improved via several approaches, including an oxygen plasma treatment. When ZnO nanorods are exposed to oxygen plasma, the charge carrier concentration decreases and the piezoelectric output voltage consequently increases. However, the effects of oxygen plasma on the mechanical properties of ZnO nanorods has not been systematically studied using a precise measurement technique. Given the size of ZnO nanorods, atomic force microscopy (AFM) is a suitable method for manipulating individual ZnO nanorods and measuring their elastic properties. In the present work, we observed the effects of oxygen plasma on the elemental composition and microstructure of ZnO nanorods. First of all, the surface roughness of the ZnO nanorods was analyzed using AFM, revealing that it increased due to the etching effect of the oxygen plasma. From X-ray photoelectron spectroscopy (XPS) measurements, three distinct peaks corresponding to lattice oxygen, oxygen vacancies, and absorbed oxygen on the surface were identified. The XPS analysis results showed that oxygen vacancy defects on the ZnO nanorods were decreased by oxygen plasma treatment. Next, the effects of oxygen plasma on the elastic properties of ZnO nanorods were studied using lateral force microscopy. It was confirmed that the elastic modulus of ZnO nanorods increased due to the reduced number of defects originating from oxygen vacancies.


Materials ◽  
2016 ◽  
Vol 9 (8) ◽  
pp. 656 ◽  
Author(s):  
Hyun Choi ◽  
Yong-Min Lee ◽  
Jung-Hoon Yu ◽  
Ki-Hwan Hwang ◽  
Jin-Hyo Boo

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..


2019 ◽  
Vol 463 ◽  
pp. 91-95 ◽  
Author(s):  
Vallivedu Janardhanam ◽  
Hyung-Joong Yun ◽  
Inapagundla Jyothi ◽  
Shim-Hoon Yuk ◽  
Sung-Nam Lee ◽  
...  

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