Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

2014 ◽  
Vol 31 (5) ◽  
pp. 057303 ◽  
Author(s):  
Xiao-Feng Wang ◽  
Zhen-Guang Shao ◽  
Dun-Jun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Forward Current

Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes

2013 ◽  
Vol 114 (14) ◽  
pp. 144511 ◽  
Author(s):  
Dawei Yan ◽  
Jinping Jiao ◽  
Jian Ren ◽  
Guofeng Yang ◽  
Xiaofeng Gu
Keyword(s):  
Schottky Diodes ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Forward Current

scholarly journals Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 194 ◽  
Author(s):  
Hogyoung Kim ◽  
Seok Choi ◽  
Byung Joon Choi
Keyword(s):  
Schottky Diodes ◽  
Thermionic Emission ◽  
Tunneling Current ◽  
Atomic Layer ◽  
Emission Model ◽  
Current Transport ◽  
Tunneling Model ◽  
Surface And Interface ◽  
Forward Current ◽  
Layer Deposition

Atomic layer deposited AlGaN on GaN substrate with different thicknesses was prepared and the electron transport mechanism of AlGaN/GaN Schottky diodes was investigated. Above 348 K, both 5 and 10 nm thick AlGaN showed that the thermionic emission model with inhomogeneous Schottky barrier could explain the forward current transport. Analysis using a dislocation-related tunneling model showed that the current values for 10 nm thick AlGaN was matched well to the experimental data while those were not matched for 5 nm thick AlGaN. The higher density of surface (and interface) states was found for 5 nm thick AlGaN. In other words, a higher density of surface donors, as well as a thinner AlGaN layer for 5 nm thick AlGaN, enhanced the tunneling current.

Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes

2015 ◽  
Vol 89 (11) ◽  
pp. 1161-1168 ◽  
Author(s):  
Y. Munikrishna Reddy ◽  
R. Padmasuvarna ◽  
T. Lakshmi Narasappa ◽  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Diodes ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Electrical Parameters ◽  
Temperature Dependent

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

2015 ◽  
Vol 117 (15) ◽  
pp. 154503 ◽  
Author(s):  
Jian Ren ◽  
Dawei Yan ◽  
Guofeng Yang ◽  
Fuxue Wang ◽  
Shaoqing Xiao ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Lattice Matched

Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

2014 ◽  
Vol 23 (9) ◽  
pp. 097307 ◽  
Author(s):  
Mei Wu ◽  
Da-Yong Zheng ◽  
Yuan Wang ◽  
Wei-Wei Chen ◽  
Kai Zhang ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Temperature Range ◽  
Forward Current ◽  
Gan Hemts
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