Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition

Atomic layer deposited AlGaN on GaN substrate with different thicknesses was prepared and the electron transport mechanism of AlGaN/GaN Schottky diodes was investigated. Above 348 K, both 5 and 10 nm thick AlGaN showed that the thermionic emission model with inhomogeneous Schottky barrier could explain the forward current transport. Analysis using a dislocation-related tunneling model showed that the current values for 10 nm thick AlGaN was matched well to the experimental data while those were not matched for 5 nm thick AlGaN. The higher density of surface (and interface) states was found for 5 nm thick AlGaN. In other words, a higher density of surface donors, as well as a thinner AlGaN layer for 5 nm thick AlGaN, enhanced the tunneling current.

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Atomic Layer Deposition of AlGaN on GaN and Current Transport Mechanism in AlGaN/GaN Schottky Diodes

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.mt-m2019232 ◽

2020 ◽

Vol 61 (1) ◽

pp. 88-93 ◽

Cited By ~ 2

Author(s):

Hogyoung Kim ◽

Hee Ju Yun ◽

Seok Choi ◽

Byung Joon Choi

Keyword(s):

Atomic Layer Deposition ◽

Transport Mechanism ◽

Schottky Diodes ◽

Atomic Layer ◽

Current Transport ◽

Current Transport Mechanism ◽

Layer Deposition

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Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Chinese Physics Letters ◽

10.1088/0256-307x/31/5/057303 ◽

2014 ◽

Vol 31 (5) ◽

pp. 057303 ◽

Cited By ~ 1

Author(s):

Xiao-Feng Wang ◽

Zhen-Guang Shao ◽

Dun-Jun Chen ◽

Hai Lu ◽

Rong Zhang ◽

...

Keyword(s):

Schottky Diodes ◽

Current Transport ◽

Transport Mechanisms ◽

Forward Current

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Nanoscale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach

Journal of Nanotechnology ◽

10.1155/2012/512379 ◽

2012 ◽

Vol 2012 ◽

pp. 1-19 ◽

Cited By ~ 35

Author(s):

N. M. Miskovsky ◽

P. H. Cutler ◽

A. Mayer ◽

B. L. Weiss ◽

Brian Willis ◽

...

Keyword(s):

Tunnel Junction ◽

Schottky Diodes ◽

Visible Region ◽

Atomic Layer ◽

Incident Radiation ◽

Optical Rectification ◽

Layer Deposition ◽

Metal Insulator Metal ◽

Conventional Material ◽

Future Work

We present a new and viable method for optical rectification. This approach has been demonstrated both theoretically and experimentally and is the basis fot the development of devices to rectify radiation through the visible. This technique for rectification is based not on conventional material or temperature asymmetry as used in MIM (metal/insulator/metal) or Schottky diodes, but on a purely sharp geometric property of the antenna. This sharp “tip” or edge with a collector anode constitutes a tunnel junction. In these devices the rectenna (consisting of the antenna and the tunnel junction) acts as the absorber of the incident radiation and the rectifier. Using current nanofabrication techniques and the selective atomic layer deposition (ALD) process, junctions of 1 nm can be fabricated, which allow for rectification of frequencies up to the blue portion of the spectrum. To assess the viability of our approach, we review the development of nanoantenna structures and tunnel junctions capable of operating in the visible region. In addition, we review the detailed process of rectification and present methodologies for analysis of diode data. Finally, we present operational designs for an optical rectenna and its fabrication and discuss outstanding problems and future work.

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Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition

MRS Advances ◽

10.1557/adv.2016.357 ◽

2016 ◽

Vol 1 (50) ◽

pp. 3421-3427

Author(s):

Mei Shen ◽

Triratna P. Muneshwar ◽

Ken Cadien ◽

Ying Y. Tsui ◽

Doug Barlage

Keyword(s):

Thin Films ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Thermionic Emission ◽

Surface Oxidation ◽

Atomic Layer ◽

Zno Thin Films ◽

Maximum Temperature ◽

Thermal Reliability ◽

Layer Deposition

ABSTRACTContact metallization is an essential obstacle for utilizing low temperature achievable polycrystalline ZnO in any discrete devices and integrated circuits. To develop ZnO based semiconductor devices with advanced feature of flexibility, transparency and compatibility with low temperature processing, rectifying junctions must be fully developed. In this work, nanoscale polycrystalline ZnO thin films are fabricated with via low temperature (<200 °C) by atomic layer deposition (ALD). A vertical structure of bottom Schottky metallized diode is developed with copper (Cu) sputtered in room temperature. A control of Cu surface oxidation is realized with an in-situ remote plasma treatment. The results indicate that preparation of the copper surface substantially affects the electrical behavior of the diode. Thermal reliability of Cu metallized Schottky diode is subsequently carried out by annealing up to a maximum temperature of 300 °C before it breaks. This work considers the current transport mechanism evolved deviating current vs voltage (I-V) characteristics from conventional thermionic emission theory.

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Au/n-InP Schottky diodes using an Al2O3interfacial layer grown by atomic layer deposition

Semiconductor Science and Technology ◽

10.1088/1361-6641/32/2/025011 ◽

2017 ◽

Vol 32 (2) ◽

pp. 025011 ◽

Cited By ~ 4

Author(s):

Hogyoung Kim ◽

Min Soo Kim ◽

Seung Yu Yoon ◽

Byung Joon Choi

Keyword(s):

Atomic Layer Deposition ◽

Schottky Diodes ◽

Atomic Layer ◽

Layer Deposition

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Morphology and crystallinity control of ultrathin TiO2 layers deposited on carbon nanotubes by temperature-step atomic layer deposition

Nanoscale ◽

10.1039/c5nr02106e ◽

2015 ◽

Vol 7 (24) ◽

pp. 10622-10633 ◽

Cited By ~ 27

Author(s):

Carlos Guerra-Nuñez ◽

Yucheng Zhang ◽

Meng Li ◽

Vipin Chawla ◽

Rolf Erni ◽

...

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Surface Coverage ◽

Multiwall Carbon Nanotubes ◽

Atomic Layer ◽

Temperature Step ◽

Surface And Interface ◽

Layer Deposition ◽

New Strategy ◽

Multiwall Carbon

A new strategy to tailor the surface and interface of ultrathin TiO2 coatings deposited by “temperature-step” atomic layer deposition with complete surface coverage of non-functionalized multiwall carbon nanotubes.

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Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes

Journal of Applied Physics ◽

10.1063/1.4824296 ◽

2013 ◽

Vol 114 (14) ◽

pp. 144511 ◽

Cited By ~ 28

Author(s):

Dawei Yan ◽

Jinping Jiao ◽

Jian Ren ◽

Guofeng Yang ◽

Xiaofeng Gu

Keyword(s):

Schottky Diodes ◽

Current Transport ◽

Transport Mechanisms ◽

Forward Current

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Epitaxial Graphene on 4H-SiC (0001) as a Versatile Platform for Materials Growth: Mini-Review

Applied Sciences ◽

10.3390/app11135784 ◽

2021 ◽

Vol 11 (13) ◽

pp. 5784

Author(s):

Ivan Shtepliuk ◽

Filippo Giannazzo ◽

Rositsa Yakimova

Keyword(s):

Field Effect Transistors ◽

Schottky Diodes ◽

Compressive Strain ◽

Atomic Layer ◽

Epitaxial Graphene ◽

Layer Deposition ◽

N Doping ◽

Pre Treatment ◽

Precursor Molecules ◽

Theoretical Results

Material growth on a dangling-bond-free interface such as graphene is a challenging technological task, which usually requires additional surface pre-treatment steps (functionalization, seed layer formation) to provide enough reactive sites. Being one of the most promising and adaptable graphene-family materials, epitaxial graphene on SiC, due to its internal features (substrate-induced n-doping, compressive strain, terrace-stepped morphology, bilayer graphene nano-inclusions), may provide pre-conditions for the enhanced binding affinity of environmental species, precursor molecules, and metal atoms on the topmost graphene layer. It makes it possible to use untreated pristine epitaxial graphene as a versatile platform for the deposition of metals and insulators. This mini-review encompasses relevant aspects of magnetron sputtering and electrodeposition of selected metals (Au, Ag, Pb, Hg, Cu, Li) and atomic layer deposition of insulating Al2O3 layers on epitaxial graphene on 4H-SiC, focusing on understanding growth mechanisms. Special deliberation has been given to the effect of the deposited materials on the epitaxial graphene quality. The generalization of the experimental and theoretical results presented here is hopefully an important step towards new electronic devices (chemiresistors, Schottky diodes, field-effect transistors) for environmental sensing, nano-plasmonics, and biomedical applications.

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Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD

MRS Proceedings ◽

10.1557/opl.2014.49 ◽

2014 ◽

Vol 1635 ◽

pp. 127-132 ◽

Cited By ~ 5

Author(s):

Mei Shen ◽

Amir Afshar ◽

Manisha Gupta ◽

Gem Shoute ◽

Ken Cadien ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Analytical Study ◽

Breakdown Strength ◽

Schottky Diodes ◽

Schottky Contact ◽

Atomic Layer ◽

Barrier Heights ◽

Schottky Rectifiers ◽

Linear Behavior ◽

Layer Deposition

ABSTRACTAn electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively. The PEALD deposited ZnO Schotty diodes demonstrated an on/off rectifying ratio of about 25 at ±1 V. The leakage current values of the PLD deposited ZnO Schottky diodes are significantly larger than those of PEALD, leading to a poor on/off rectifying ratio of ∼4. Due to the small thickness, a critical breakdown strength of 1.3 MV/cm was estimated for PEALD-ZnO thin films.

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