Experimental investigation of dynamic photo-thermal effect

2006 ◽  
Vol 23 (8) ◽  
pp. S259-S266 ◽  
Author(s):  
M De Rosa ◽  
F Marin ◽  
F Marino ◽  
O Arcizet ◽  
A Heidmann ◽  
...  
1998 ◽  
Vol 12 (09) ◽  
pp. 335-341
Author(s):  
S. Z. Zainabidinov ◽  
O. O. Mamatkarimov ◽  
I. G. Tursunov ◽  
U. A. Tuychiev

In this paper the strain thermal Hall effect has been investigated in initial n-Si(P) and strongly compensated n-Si(Ni) samples of different compensation degree, which have been subject to uniform hydrostatic compression (UHC) under a pulse pressure regime ranging from 0 to 7×108 Pa. An experimental investigation of the strain thermal effect in the n-Si(Ni) sample leads to an essential strain conductivity increase, which is largely controlled by density variations of majority carriers.


2020 ◽  
Vol 200 ◽  
pp. 106269 ◽  
Author(s):  
Tao Wang ◽  
Cheng Li ◽  
Binxuan Zhou ◽  
Yi Zhang ◽  
Man Zhang ◽  
...  

2018 ◽  
Vol 173 ◽  
pp. 710-718 ◽  
Author(s):  
Haiying Wang ◽  
Guodan Liu ◽  
Songtao Hu ◽  
Chao Liu

Sign in / Sign up

Export Citation Format

Share Document