Dynamic Strain Conductivity of Compensated Silicon

1998 ◽  
Vol 12 (09) ◽  
pp. 335-341
Author(s):  
S. Z. Zainabidinov ◽  
O. O. Mamatkarimov ◽  
I. G. Tursunov ◽  
U. A. Tuychiev
Keyword(s):  
Experimental Investigation ◽  
Hall Effect ◽  
Thermal Effect ◽  
Pulse Pressure ◽  
Hydrostatic Compression ◽  
Dynamic Strain ◽  
Conductivity Increase ◽  
Pressure Regime

In this paper the strain thermal Hall effect has been investigated in initial n-Si(P) and strongly compensated n-Si(Ni) samples of different compensation degree, which have been subject to uniform hydrostatic compression (UHC) under a pulse pressure regime ranging from 0 to 7×108 Pa. An experimental investigation of the strain thermal effect in the n-Si(Ni) sample leads to an essential strain conductivity increase, which is largely controlled by density variations of majority carriers.

scholarly journals Hall Effect Thruster Direct Drive PPUs, Experimental Investigation of the Cathode Potential Grounding Problem

2017 ◽  
Vol 16 ◽  
pp. 15002 ◽  
Author(s):  
Luca Ghislanzoni ◽  
Luca Benetti ◽  
Tommaso Misuri ◽  
Giovanni Cesaretti ◽  
Lorenzo Fontani
Keyword(s):  
Experimental Investigation ◽  
Hall Effect ◽  
Cathode Potential ◽  
Direct Drive ◽  
Hall Effect Thruster ◽  
Grounding Problem

Experimental investigation of spin Hall effect in indium tin oxide thin film

2013 ◽  
Vol 103 (18) ◽  
pp. 182404 ◽  
Author(s):  
Z. Qiu ◽  
T. An ◽  
K. Uchida ◽  
D. Hou ◽  
Y. Shiomi ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Investigation ◽  
Hall Effect ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Hall Effect ◽  
Oxide Thin Film

Experimental investigation of dynamic photo-thermal effect

2006 ◽  
Vol 23 (8) ◽  
pp. S259-S266 ◽  
Author(s):  
M De Rosa ◽  
F Marin ◽  
F Marino ◽  
O Arcizet ◽  
A Heidmann ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Thermal Effect
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